2N4401-AP Micro Commercial Components (MCC)

2N4401-AP electronic component of Micro Commercial Components (MCC)
2N4401-AP Micro Commercial Components (MCC)
2N4401-AP Bipolar Transistors - BJT
2N4401-AP  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N4401-AP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N4401-AP Bipolar Transistors - BJT are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2N4401-AP
Manufacturer: Micro Commercial Components (MCC)
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 40 V 250MHz 600 mW Through Hole TO-92
Datasheet: 2N4401-AP Datasheet (PDF)
Price (USD)
1: USD 0.7625 ea
Line Total: USD 0.76 
Availability : 52983
  
Ship by Fri. 22 Aug to Tue. 26 Aug
QtyUnit Price
1$ 0.7625
10$ 0.4637
100$ 0.2795
500$ 0.198
1000$ 0.1683
2500$ 0.1078
20000$ 0.1067

Availability 52983
Ship by Fri. 22 Aug to Tue. 26 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7625
10$ 0.4637
100$ 0.2795
500$ 0.198
1000$ 0.1683
2500$ 0.1078
20000$ 0.1067


Availability 1225
Ship by Tue. 26 Aug to Mon. 01 Sep
MOQ : 1263
Multiples : 1
QtyUnit Price
1263$ 0.2088
100000$ 0.1957

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N4401-AP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N4401-AP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N4401 Features Halogen Free Available Upon Request By Adding Suffix-H Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN General Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Purpose Amplifier Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 200/W Junction to Ambient Parameter Symbol Rating Unit V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V CEO Emitter-Base Voltage V 6 V EBO TO-92 Continuous Collector Current I 600 mA C Power Dissipation P 625 mW D A E Marking: Type Number Internal Structure B 1 2 3 G C C B 1.EMITTER 2.BASE 3.COLLECTOR E D DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.169 0.185 4.30 4.70 B 0.169 0.185 4.30 4.70 C 0.500 ----- 12.70 ----- D 0.015 0.022 0.38 0.55 E 0.130 0.146 3.30 3.70 0.095 0.105 2.42 2.67 Straight Lead G 0.173 0.220 4.40 5.60 Bent Rev.3-2-12012020 1/4 MCCSEMI.COM2N4401 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V 60 V I =100A, I =0 (BR)CBO C E Collector-Emitter Breakdown Voltage* V 40 V I =1mA, I =0 (BR)CEO C B Emitter-Base Breakdown Voltage V 6 V I =100A, I =0 (BR)EBO E C Base Cutoff Current I 0.1 A V =35V, V =0.4V BL CE BE Collector Cut-off Current I 0.1 A V =35V, V =0.4V CEX CE BE h V =1V, I =0.1mA 20 FE(1) CE C h V =1V, I =1mA 40 FE(2) CE C h V =1V, I =10mA DC Current Gain* 80 FE(3) CE C h V =1V, I =150mA 100 300 FE(4) CE C h V =1V, I =500mA 40 FE(5) CE C I =150mA, I =15mA 0.4 V C B V Collector-Emitter Saturation Voltage CE(sat) I =500mA, I =50mA 0.75 V C B I =150mA, I =15mA 0.75 0.95 V C B Base-Emitter Saturation Voltage V BE(sat) 1.2 V I =500mA, I =50mA C B Transition Frequency f 250 MHz V =10V, I =20mA, f=100MHz T CE C Delay Time t 15 ns V =30V, V =0.2V, I =150mA, d CC BE C I =15mA Rise Time t 20 ns B1 r Storage Time t 225 ns s V =30V, I =150mA, I =I =15mA CC C B1 B2 t Fall Time 30 ns f C V =5V, I =0,f=100KHz Collector-Base Capacitance 6.5 pF cb CB E C V =0.5V, I =0, f=100KHz Emitter-Base Capacitance 30 pF eb EB C *.Pulse test: Pulse Width300s,Duty Cycle2.0%. Rev.3-2-12012020 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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