MMDT4401 Features Epitaxial Planar Die Construction Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Dual NPN Epoxy Meets UL 94 V-0 Flammability Rating Plastic-Encapsulate Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Transistors Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 625 /W Junction to Ambient SOT-363 Parameter Symbol Rating Unit V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V CEO G 6 5 4 V Emitter-Base Voltage 6 V EBO C I B Continuous Collector Current 600 mA C 1 2 3 P Power Dissipation 200 mW D A Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, M <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. H K L J D Marking: K2X DIMENSIONS INCHES MM DIM NOTE Internal Structure MIN MAX MIN MAX A 0.006 0.014 0.15 0.35 B 0.045 0.053 1.15 1.35 6 5 4 C 0.079 0.096 2.00 2.45 0.026 0.65 D TYP. G 0.047 0.055 1.20 1.40 H 0.071 0.087 1.80 2.20 J ----- 0.004 ----- 0.10 K 0.031 0.043 0.80 1.10 1 2 3 L 0.010 0.018 0.26 0.46 M 0.003 0.006 0.08 0.15 Suggested Solder Pad Layout (mm) 0.65 1.94 0.80 0.40 Rev.3-3-12012020 1/4 MCCSEMI.COMMMDT4401 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions V I =100A, I =0 Collector-Base Breakdown Voltage 60 V (BR)CBO C E V I =1mA, I =0 Collector-Emitter Breakdown Voltage 40 V (BR)CEO C B Emitter-Base Breakdown Voltage V 6 V I =100A, I =0 (BR)EBO E C Collector Cutoff Current I 0.1 A V =50V, I =0 CBO CB E Emitter Cutoff Current I 0.1 A V =5V, I =0 EBO EB C h 20 V =1V, I =0.1mA FE(1) CE C h 40 V =1V, I =1mA FE(2) CE C DC Current Gain h 80 V =1V, I =10mA FE(3) CE C h 100 300 V =1V, I =150mA FE(4) CE C h 40 V =2V, I =500mA FE(5) CE C 0.4 V I =150mA, I =15mA C B Collector-Emitter Saturation Voltage V CE(sat) 0.75 V I =500mA, I =50mA C B 0.75 0.95 V I =150mA, I =15mA C B V Base-Emitter Saturation Voltage BE(sat) I =500mA, I =50mA 1.2 V C B f V =10V, I =20mA, f=100MHz Transition Frequency 250 MHz T CE C t Delay Time 15 ns d V =30V, V =2V, I =150mA, CC BE C I =15mA t Rise Time 20 ns B1 r t Storage Time 225 ns s V =30V, I =150mA, I =-I =15mA CC C B1 B2 t Fall Time 30 ns f C V =5V, I =0,f=1MHz Output Capacitance 6.5 pF ob CB E Rev.3-3-12012020 2/4 MCCSEMI.COM