MMDT4403 Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Dual PNP Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Plastic-Encapsulate Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +150 Storage Temperature Range: -55 to +150 Thermal Resistance: 625 /W Junction to Ambient SOT-363 Parameter Symbol Rating Unit V Collector-Base Voltage -40 V CBO G 6 5 4 V Collector-Emitter Voltage -40 V CEO C V B Emitter-Base Voltage -5 V EBO 1 2 3 I Continuous Collector Current -600 mA C P Power Dissipation 200 mW D A M H Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. K L J D DIMENSIONS INCHES MM Marking: K2T DIM NOTE MIN MAX MIN MAX A 0.006 0.014 0.15 0.35 B 0.045 0.053 1.15 1.35 Internal Structure C 0.079 0.096 2.00 2.45 0.026 0.65 D TYP. G 0.047 0.055 1.20 1.40 6 5 4 H 0.071 0.087 1.80 2.20 J ----- 0.004 ----- 0.10 K 0.031 0.043 0.80 1.10 L 0.010 0.018 0.26 0.46 M 0.003 0.006 0.08 0.15 Suggested Solder Pad Layout 1 2 3 (mm) 0.65 1.94 0.80 0.40 Rev.3-4-12012020 1/4 MCCSEMI.COMMMDT4403 Electrical Characteristics T =25C Unless Otherwise Specified A Parameter Symbol Min Typ Max Units Conditions V I =-100A, I =0 Collector-Base Breakdown Voltage -40 V (BR)CBO C E V I =-1mA, I =0 Collector-Emitter Breakdown Voltage -40 V (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I =-100A, I =0 (BR)EBO E C Collector Cutoff Current I -0.1 A V =-50V, I =0 CBO CB E Emitter Cutoff Current I -0.1 A V =-5V, I =0 EBO EB C h 30 V =-1V, I =-0.1mA FE(1) CE C h 60 V =-1V, I =-1mA FE(2) CE C DC Current Gain h 100 V =-1V, I =-10mA FE(3) CE C h 100 300 V =-2V, I =-150mA FE(4) CE C h 20 V =-2V, I =-500mA FE(5) CE C -0.4 V I =-150mA, I =-15mA C B Collector-Emitter Saturation Voltage V CE(sat) -0.75 V I =-500mA, I =-50mA C B -0.75 -0.95 V I =-150mA, I =-15mA C B V Base-Emitter Saturation Voltage BE(sat) I =-500mA, I =-50mA -1.3 V C B f V =-10V, I =-20mA, f=100MHz Transition Frequency 200 MHz T CE C t Delay Time 15 ns d V =-30V, V =-2V, I =-150mA, CC BE C I =-15mA t Rise Time 20 ns B1 r t Storage Time 225 ns s V =-30V, I =-150mA, I =-I =-15mA CC C B1 B2 t Fall Time 30 ns f C V =-10V, I =0, f=1MHz Output Capacitance 8.5 pF ob CB E Rev.3-4-12012020 2/4 MCCSEMI.COM