BCP53-16,135 Nexperia

BCP53-16,135 electronic component of Nexperia
BCP53-16,135 Nexperia
BCP53-16,135 Bipolar Transistors - BJT
BCP53-16,135  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BCP53-16,135 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCP53-16,135 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BCP53-16,135
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 80 V 1 A 145MHz 1 W Surface Mount SOT-223
Datasheet: BCP53-16,135 Datasheet (PDF)
Price (USD)
1: USD 0.4012 ea
Line Total: USD 0.4 
Availability : 2320
  
Ship by Wed. 27 Aug to Fri. 29 Aug
QtyUnit Price
1$ 0.4012
10$ 0.245
100$ 0.1476
500$ 0.1023
1000$ 0.0847
2000$ 0.0836
4000$ 0.0649
8000$ 0.0616
24000$ 0.0605

Availability 2320
Ship by Wed. 27 Aug to Fri. 29 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4012
10$ 0.245
100$ 0.1476
500$ 0.1023
1000$ 0.0847
2000$ 0.0836
4000$ 0.0649
8000$ 0.0616
24000$ 0.0605


Availability 10225
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 2393
Multiples : 1
QtyUnit Price
2393$ 0.1087


Availability 15520
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 5770
Multiples : 1
QtyUnit Price
5770$ 0.0813
10000$ 0.0725
100000$ 0.0607


Availability 82
Ship by Fri. 05 Sep to Wed. 10 Sep
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.4506
50$ 0.3586
150$ 0.2155
500$ 0.1823
2500$ 0.1675
4000$ 0.1586


Availability 25360
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 5770
Multiples : 1
QtyUnit Price
5770$ 0.0813
10000$ 0.0725
100000$ 0.0607

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCP53-16,135 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCP53-16,135 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCP53 BCX53 BC53PA 80 V, 1 A PNP medium power transistors Rev. 9 19 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview 1 Type number Package NPN complement Nexperia JEITA JEDEC BCP53 SOT223 SC-73 - BCP56 BCX53 SOT89 SC-62 TO-243 BCX56 BC53PA SOT1061 - - BC56PA 1 Valid for all available selection groups. 1.2 Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 1.3 Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit collector-emitter voltage open base - - 80 V V CEO collector current - - 1A I C peak collector current single pulse t 1ms - - 2A I CM pBCP53 BCX53 BC53PA Nexperia 80 V, 1 A PNP medium power transistors Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit h DC current gain V = 2V 63 - 250 FE CE I = 150 mA C h selection -10 V = 2V 63 - 160 FE CE I = 150 mA C h selection -16 V = 2V 100 - 250 FE CE I = 150 mA C 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol SOT223 1base 4 2, 4 2 collector 3emitter 1 4 collector 132 3 sym028 SOT89 1emitter 2 2 collector 3base 3 321 1 006aaa231 SOT1061 1base 3 3 2emitter 3 collector 1 2 sym013 12 Transparent top view BCP53 BCX53 BC53PA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 9 19 October 2011 2 of 22

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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