PBSS304PX,115 Nexperia

PBSS304PX,115 electronic component of Nexperia
PBSS304PX,115 Nexperia
PBSS304PX,115 Bipolar Transistors - BJT
PBSS304PX,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PBSS304PX,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS304PX,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PBSS304PX,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 60 V 4.2 A 130MHz 2.1 W Surface Mount SOT-89
Datasheet: PBSS304PX,115 Datasheet (PDF)
Price (USD)
3000: USD 0.1171 ea
Line Total: USD 351.3 
Availability : 2910
  
Ship by Thu. 28 Aug to Wed. 03 Sep
QtyUnit Price
3000$ 0.1171

Availability 2560
Ship by Thu. 28 Aug to Wed. 03 Sep
MOQ : 1127
Multiples : 1
QtyUnit Price
1127$ 0.2308


Availability 2910
Ship by Thu. 28 Aug to Wed. 03 Sep
MOQ : 3000
Multiples : 1000
QtyUnit Price
3000$ 0.1171


Availability 3880
Ship by Thu. 28 Aug to Wed. 03 Sep
MOQ : 4000
Multiples : 4000
QtyUnit Price
4000$ 0.2774


Availability 208
Ship by Thu. 28 Aug to Wed. 03 Sep
MOQ : 211
Multiples : 1
QtyUnit Price
211$ 1.2324
336$ 0.7761


Availability 609
Ship by Tue. 26 Aug to Thu. 28 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.26
10$ 0.8316
42$ 0.4606
115$ 0.4354
500$ 0.4186


Availability 97
Ship by Thu. 04 Sep to Tue. 09 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.7288
10$ 1.68
30$ 1.3311
100$ 1.1262
500$ 1.0348
1000$ 0.9938


Availability 101850
Ship by Thu. 28 Aug to Wed. 03 Sep
MOQ : 1537
Multiples : 1
QtyUnit Price
1537$ 0.3051
10000$ 0.272
100000$ 0.228


Availability 2560
Ship by Thu. 28 Aug to Wed. 03 Sep
MOQ : 1127
Multiples : 1
QtyUnit Price
1127$ 0.2308


Availability 2910
Ship by Thu. 28 Aug to Wed. 03 Sep
MOQ : 3000
Multiples : 1000
QtyUnit Price
3000$ 0.1171

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS304PX,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS304PX,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PBSS304PX 60 V, 4.2 A PNP low V (BISS) transistor CEsat Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT89 CEsat (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS304NX. 1.2 Features Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 60 V CEO I collector current - - 4.2 A C I peak collector current single pulse -- 8.4 A CM t 1ms p 1 R collector-emitter saturation I = 4A - 4869m CEsat C resistance I = 200 mA B 1 Pulse test: t 300 s 0.02. p

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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