Product Information

PMBT3906,235

PMBT3906,235 electronic component of Nexperia

Datasheet
Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 250 mW Surface Mount TO-236AB
Manufacturer: Nexperia
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10000: USD 0.0101 ea
Line Total: USD 101

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PMBT3906,235
Nexperia

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Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
LoadingGif

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Additional Infomation About Product

PMBT3906 PNP switching transistor Rev. 06 2 March 2010 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT3904. 1.2 Features and benefits Collector-emitter voltage V = 40 V CEO Collector current capability I = 200 mA C 1.3 Applications General amplification and switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 40 V CEO I collector current - - 200 mA C 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 3 3 2emitter 3 collector 1 12 2 006aab259PMBT3906 Nexperia PNP switching transistor 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMBT3906 - plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PMBT3906 *2A 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 40 V CBO V collector-emitter voltage open base - 40 V CEO V emitter-base voltage open collector - 6V EBO I collector current - 200 mA C I peak collector current - 200 mA CM I peak base current - 100 mA BM 1 P total power dissipation T 25 C -250 mW tot amb T junction temperature - 150 C j T ambient temperature 65 +150 C amb T storage temperature 65 +150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB). PMBT3906 6 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 06 2 March 2010 2 of 11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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