X-On Electronics has gained recognition as a prominent supplier of PMSTA55,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PMSTA55,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PMSTA55,115 Nexperia

Hot PMSTA55,115 electronic component of Nexperia
PMSTA55,115 Nexperia
PMSTA55,115 Bipolar Transistors - BJT
PMSTA55,115  Semiconductors

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See Product Specifications
Part No. PMSTA55,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT TRANS HV TAPE-7
Datasheet: PMSTA55,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
12988: USD 0.02 ea
Line Total: USD 259.76 
Availability - 20127
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ: 12988  Multiples: 1
Pack Size: 1
Availability Price Quantity
2313
Ship by Wed. 18 Jun to Fri. 20 Jun
MOQ : 1
Multiples : 1
1 : USD 0.1475
10 : USD 0.1012
100 : USD 0.045
1000 : USD 0.0352
3000 : USD 0.0242
45000 : USD 0.022
99000 : USD 0.0209

20127
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 12988
Multiples : 1
12988 : USD 0.02

20370
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 15152
Multiples : 1
15152 : USD 0.031
100000 : USD 0.026

96030
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 15152
Multiples : 1
15152 : USD 0.031
100000 : USD 0.026

   
Manufacturer
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RoHS - XON
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Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
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Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
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Dc Collectorbase Gain Hfe Min
Maximum Power Dissipation
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We are delighted to provide the PMSTA55,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMSTA55,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PMSTA55 PMSTA56 500 mA PNP general-purpose transistors Rev. 05 1 February 2010 Product data sheet 1. Product profile 1.1 General description PNP transistors in a SOT323 (SC-70) very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN complement Nexperia JEITA PMSTA55 SOT323 SC-70 PMSTA05 PMSTA56 PMSTA06 1.2 Features High current (max. 500 mA) Collector-emitter voltage: 60 V (PMSTA55) 80 V (PMSTA56) 1.3 Applications Intended for telephony and professional communication equipment. 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 3 3 2emitter 3 collector 1 2 12 006aab259PMSTA55 PMSTA56 Nexperia 500 mA PNP general-purpose transistors 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMSTA55 SC-70 plastic surface-mounted package 3 leads SOT323 PMSTA56 4. Marking Table 4. Marking codes 1 Type number Marking code PMSTA55 *2H PMSTA56 *2G 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter CBO PMSTA55 - 60 V PMSTA56 - 80 V V collector-emitter voltage open base CEO PMSTA55 - 60 V PMSTA56 - 80 V V emitter-base voltage open collector - 4V EBO I collector current - 500 mA C I peak collector current - 500 mA CM I peak base current - 500 mA BM 1 P total power dissipation T 25 C -200 mW tot amb T junction temperature - 150 C j T ambient temperature 65 +150 C amb T storage temperature 65 +150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMSTA55 56 5 Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 05 1 February 2010 2 of 8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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