NTE300 (NPN) & NTE307 (PNP) Silicon Complementary Transistors Audio Power Amplifier Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector-Base Voltage, V . 50V CBO Collector-Emitter Voltage, V 40V CEO Emitter-Base Voltage, V 5V EBO Collector Current, I . 1.5A C Collector Power Dissipation (T = +25C), P 7W C C Operating Junction Temperature, T . +150C J Storage Temperature Range, T -55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage V I = 1mA, I = 0 50 - - V (BR)CBO C E Collector-Emitter Breakdown Voltage V I = 10mA, R = 40 - - V (BR)EBO C BE Emitter-Base Breakdown Voltage V I = 1mA, I = 0 5 - - V (BR)EBO E C Collector Cutoff Current I V = 25V, I = 0 - - 1 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 - - 1 A EBO EB C DC Current Gain h V = 4V, I = 500mA 55 - 300 FE CE C Collector-Emitter Saturation Voltage V I = 1A, I = 50mA - - 1 V CE(sat) C B Base-Emitter Voltage V V = 4V, I = 50mA - 0.7 - V BE CE C.380 (9.56) .180 (4.57) .132 (3.35) Dia C .500 (12.7) .325 1.200 (9.52) (30.48) Ref .070 (1.78) x 45 Chamf .300 (7.62) .050 (1.27) .400 (10.16) Min CB E .100 (2.54) .100 (2.54)