NTE348 NTE

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTE348 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE348 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.	NTE348
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: NPN; bipolar; RF; 18V; 1A; 12W; T72H; Pout:4W
Datasheet:	NTE348 Datasheet (PDF)

Price (USD)

2: USD 61.7963 ea
Line Total: USD 123.59

Availability : 0

Qty	Unit Price
2	$ 61.7963
10	$ 44.4312
25	$ 41.472
50	$ 38.88

NTE348 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Tue. 02 Sep to Mon. 08 Sep

MOQ : 2
Multiples : 1

Qty	Unit Price
2	$ 61.7963
10	$ 44.4312
25	$ 41.472
50	$ 38.88

Availability 0

Ship by Fri. 29 Aug to Tue. 02 Sep

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 57.5743

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Kind Of Transistor Rf Rf
Case T72h T72h
Mounting Screw Screw
Polarisation Bipolar Bipolar
Type Of Transistor Npn Npn
Output Power 4 W 4 W
Collector-Emitter Voltage 18 V 18 V
Collector Current 1 A 1 A
Power Dissipation 12 W 12 W
Frequency 130 To 175 MHz 130 To 175 MHz

We are delighted to provide the NTE348 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE348 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE348 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE348 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF largesignal power amplifier applications required in military and industrial equipment to 300MHz. Features: Specified 12.5V, 175MHz Characteristics: Output Power = 4W Minimum Gain = 12dB Efficiency = 50% Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CES EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C Total Device Dissipation (Note 1, T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68.5mW/C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 10mA, I = 0 18 V (BR)CEO C B V I = 5mA, V = 0 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 15V, I = 0 0.25 mA CBO CB E I V = 15V, V = 0, T = +55C 5 mA CES CE BE C ON Characteristics DC Current Gain h I = 250mA, V = 5V 5 FE C CEElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Output Capacitance C V = 15V, I = 0, f = 0.1MHz 15 20 pF ob CB E Functional Tests (V = 12.5V unless otherwise specified) CC CommonEmitter Amplifier G P = 4W, f = 175MHz 12 dB PE out Power Gain 1.040 (26.4) Max .520 (13.2) C .230 EE (5.84) B .385 (9.8) .100 (2.54) Dia .005 (0.15) .168 (4.27) .750 (19.05) 832NC3A Wrench Flat

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE ELECTRONICS may also be referenced as

NTE ELECTRONICS, INC.

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