NTE53 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE53 is a silicon NPN transistor in a TO3 type package designed for high voltage, high-speed power switching in inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V line-operated switch-mode appliations. Applications: Switching Regulators PWM Inverters and Motor Controls Deflection Circuits Solenoid and Relay Drivers Absolute Maximum Ratings: Collector-Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V CEO(sus) Collector-Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V CEX(sus) Collector-Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850V CEV Emitter-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, I B Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Total Device Dissipation (T = +100C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W C D Operating Junction Temperatur Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C J Storage Temperatur Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C stg Thermal Resistance, Junction-to-Case, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W thJC Maximum Lead temperature (During Soldering, 1/8 from case, 5sec), T . . . . . . . . . . . . . . . +275C L Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle 10%.Electrical Charactetristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 2) Collector-Emitter Sustaining Voltage V I = 100mA, I = 0 400 - - V CEO(sus) C B V I = 8A, V = 450V, T = +100C 450 - - V CEX(sus) C clamp C I = 15A, V = 300V, T = +100C 300 - - V C clamp C Collector Cutoff Current I V = 850V, V = 1.5V - - 1.0 mA CEV CEV BE(off) V = 850V, V = 1.5V, - - 4.0 mA CEV BE(off) T = +100C C I V = 850V, R = 50 , T = +100C - - 5.0 mA CER CE BE C Emitter Cutoff Current I V = 9V, I = 0 - - 1.0 mA EBO EB C Second Breakdown Second Breakdown Collector I V = 100V, t = 1.0s (non-repetitive) 0.2 - - A S/b CE Current with Base Forward Bias ON Characteristics (Note 2) DC Current Gain h V = 2V, I = 5A 12 - 60 FE CE C V = 2V, I = 10A 6 - 30 CE C Collector-Emitter Saturation Voltage V I = 10A, I = 2A - - 1.5 V CE(sat) C B I = 10A, I = 2A, T = +100C - - 2.5 V C B C I = 15A, I = 3A - - 5.0 V C B Base-Emitter Saturation Voltage V I = 10A, I = 2A - - 1.6 V BE(sat) C B I = 10A, I = 2A, T = +100C - - 1.6 V C B C Dynamic Characteristics Current Gain-Bandwidth Product f V = 10V, I = 500mA, f = 1MHz 6 - 28 MHz T CE C Output Capacitance C V = 10V, I = 0, f = 1MHz 125 - 500 pF ob CB E Switching Characteristics (Resistive Load) Delay Time t V = 250V, I = 10A, I = I =2A, - - 0.05 s d CC C B1 B2 t = 300 s, Duty Cycle 2% p Rise Time t - - 1.0 s r Storage Time t - - 4.0 s s Fall Time t - - 0.7 s f Switching Characteristics (Inductive Load, Clamped) Storage Time t - 2.0 - s I = 10A peak, V = 450V, I = 2A, sv C clamp B1 V = 5V BE(off) Fall Time t 0.09 - - s fi Storage Time t I = 10A peak, V = 450V, I = 2A, - - 5.0 s sv C clamp B1 V = 5V, T = +100C BE(off) J Fall Time t - - 1.5 s fi Note 2. Pulse test: Pulse Width = 300 s, Duty Cycle 2%.