BC817-16/-25/-40
Taiwan Semiconductor
Small Signal Product
300mW, NPN Small Signal Transistor
FEATURES
- Low power loss, high current capability, low VF
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS complian
- Green compound (Halogen free) with suffix on
packing code and prefix on date code
MECHANICAL DATA
- Case: SOT- 23 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260C/10s
SOT-23
- Weight: 0.008gram (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted)
A
PARAMETER VALUE
SYMBOL UNIT
P
Power dissipation 300 mW
D
Collector-Base Voltage V 50
V
CBO
Collector-Emitter Voltage V 45 V
CEO
V
Emitter-Base Voltage 5 V
EBO
Collector Current I 500
mA
C
Thermal Resistance (Junction to Ambient) R 417 C
JA
Junction Temperature T 150
C
J
Storage Temperature Range T -55 to + 150 C
STG
Notes: 1. Valid provided that electrodes are kept at ambient temperature
PARAMETER BC817-16 BC817-25 BC817-40
SYMBOL UNIT
Collector-Base Breakdown Voltage I = 10A I = 0 V 50 V
C E (BR)CBO
I = 10mA I = 0 V
Collector-Emitter Breakdown Voltage 45 V
C B (BR)CEO
Emitter-Base Breakdown Voltage I = 1A I = 0 V 5
V
E C (BR)EBO
Collector Cut-off Current V = 45V I = 0 I 0.1 A
CB E CBO
Emitter Cut-off Current V = 4V I = 0 I 0.1
A
EB C EBO
Collector-Emitter Saturation Voltage I = 500mA I = 50 mA V 0.7 V
C B CE(sat)
I = 500mA I = 50 mA V
Base-Emitter Saturation Voltage 1.2 V
C B BE(sat)
V = 5V I = 10mA f 100
Transition Frequency f= 100MHz MHz
CE C T
Junction Capacitance V =10V f= 1.0MHz C 10 pF
CB CBO
V = 1V I = 100mA 100 400 600
CE C
DC Current Gain h
FE
V = 1V I = 100mA >40 160 250
CE C
h
DC Current Gain 100-250 160-400 250-600
FE
Vce=1V Ic=500mA h 40
Min. DC Current Gain
FE
Version: G14
Document Number: DS_S1404005BC817-16/-25/-40
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25 unless otherwise noted)
Fig. 2 Collector-Emitter Saturation Voltage VS.
Fig.1 Typical Pulsed Current Gain VS.
Collector Current
10
10.00
o
25 C
1
1.00
0.1
0.10
0.01
V = 5 V
CE
0.001
0.01
0 100 200 300 400 500
0.0 0.1 0.2 0.3 0.4 0.5 0.6
h
FE V Collector Emitter Voltage (V)
CE(sat) ,
Fig. 3 Base-Emitter Saturation Voltage
Fig. 3
Fig. 4 Base-Emitter On Voltage
VS. Collector Current
VS. Collector Current
1000
1.000
100
0.100
o
25 C
o
25 C
10
0.010
0.001
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V , Base-Emitter on Voltage (V)
BE(sat)
V , Base-Emitter Voltage (V)
BE
Fig. 5 Collector-Base Capacitance VS.
Fig. 5
Collector-Base Voltage
40
30
20
10
0
0 4 8 12 16 20 24 28
V , Collector-Base Voltage (V)
CB
Version: G14
Document Number: DS_S1404005
I , Collector Current (mA)
C
I , Collector Current (A)
Collector-Base Capacitance (pF) C
I Collector Current (mA)
C ,
I , Collector Current (A)
C