BC817-40 NXP

BC817-40 electronic component of NXP
BC817-40 NXP
BC817-40 Bipolar Transistors - BJT
BC817-40  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BC817-40 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC817-40 Bipolar Transistors - BJT are a product manufactured by NXP. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BC817-40
Manufacturer: NXP
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Transistor 300mW
Datasheet: BC817-40 Datasheet (PDF)
Price (USD)
500: USD 0.0425 ea
Line Total: USD 21.25 
Availability : 0
  
QtyUnit Price
500$ 0.0425
1500$ 0.0336

Availability 0
Ship by Wed. 20 Aug to Tue. 26 Aug
MOQ : 500
Multiples : 1
QtyUnit Price
500$ 0.0425
1500$ 0.0336

   
Manufacturer
Product Category
Package / Case
Transistor Polarity
Packaging
Brand
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Product Range
Msl
Svhc
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Current Ic Hfe
Device Marking
Gain Bandwidth Ft Min
Gain Bandwidth Ft Typ
Hfe Min
No. Of Transistors
Operating Temperature Min
Operating Temperature Range
Power Dissipation Ptot Max
Smd Marking
Termination Type
Voltage Vcbo
LoadingGif
 
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We are delighted to provide the BC817-40 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC817-40 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC817-16/-25/-40 Taiwan Semiconductor Small Signal Product 300mW, NPN Small Signal Transistor FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS complian - Green compound (Halogen free) with suffix on packing code and prefix on date code MECHANICAL DATA - Case: SOT- 23 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260C/10s SOT-23 - Weight: 0.008gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT P Power dissipation 300 mW D Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 45 V CEO V Emitter-Base Voltage 5 V EBO Collector Current I 500 mA C Thermal Resistance (Junction to Ambient) R 417 C JA Junction Temperature T 150 C J Storage Temperature Range T -55 to + 150 C STG Notes: 1. Valid provided that electrodes are kept at ambient temperature PARAMETER BC817-16 BC817-25 BC817-40 SYMBOL UNIT Collector-Base Breakdown Voltage I = 10A I = 0 V 50 V C E (BR)CBO I = 10mA I = 0 V Collector-Emitter Breakdown Voltage 45 V C B (BR)CEO Emitter-Base Breakdown Voltage I = 1A I = 0 V 5 V E C (BR)EBO Collector Cut-off Current V = 45V I = 0 I 0.1 A CB E CBO Emitter Cut-off Current V = 4V I = 0 I 0.1 A EB C EBO Collector-Emitter Saturation Voltage I = 500mA I = 50 mA V 0.7 V C B CE(sat) I = 500mA I = 50 mA V Base-Emitter Saturation Voltage 1.2 V C B BE(sat) V = 5V I = 10mA f 100 Transition Frequency f= 100MHz MHz CE C T Junction Capacitance V =10V f= 1.0MHz C 10 pF CB CBO V = 1V I = 100mA 100 400 600 CE C DC Current Gain h FE V = 1V I = 100mA >40 160 250 CE C h DC Current Gain 100-250 160-400 250-600 FE Vce=1V Ic=500mA h 40 Min. DC Current Gain FE Version: G14 Document Number: DS_S1404005BC817-16/-25/-40 Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) Fig. 2 Collector-Emitter Saturation Voltage VS. Fig.1 Typical Pulsed Current Gain VS. Collector Current 10 10.00 o 25 C 1 1.00 0.1 0.10 0.01 V = 5 V CE 0.001 0.01 0 100 200 300 400 500 0.0 0.1 0.2 0.3 0.4 0.5 0.6 h FE V Collector Emitter Voltage (V) CE(sat) , Fig. 3 Base-Emitter Saturation Voltage Fig. 3 Fig. 4 Base-Emitter On Voltage VS. Collector Current VS. Collector Current 1000 1.000 100 0.100 o 25 C o 25 C 10 0.010 0.001 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V , Base-Emitter on Voltage (V) BE(sat) V , Base-Emitter Voltage (V) BE Fig. 5 Collector-Base Capacitance VS. Fig. 5 Collector-Base Voltage 40 30 20 10 0 0 4 8 12 16 20 24 28 V , Collector-Base Voltage (V) CB Version: G14 Document Number: DS_S1404005 I , Collector Current (mA) C I , Collector Current (A) Collector-Base Capacitance (pF) C I Collector Current (mA) C , I , Collector Current (A) C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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