Product Information

2N3906G

2N3906G electronic component of ON Semiconductor

2N3906G
PNP transistor for general purpose with low noise and medium current.

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0285 ea
Line Total: USD 0.03

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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2N3906G
ON Semiconductor

1 : USD 0.0285
10 : USD 0.0265
2500 : USD 0.0226
15000 : USD 0.0219
25000 : USD 0.0215

     
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The 2N3906G is an NPN Bipolar Junction Transistor (BJT) from ON Semiconductor. It is designed to be used in low-power, general-purpose switching and amplifier applications. It has a maximum DC collector current of 200 mA, a maximum DC collector-base voltage of 40 V, a maximum DC emitter-base voltage of 5 V, and an amplification factor of 400-600. The 2N3906G is available in three different packages: Micro-8 (TO-92) , SOT-23, and SOT-223. The maximum power dissipation is 625 mW with minimal thermal resistance. The transistor is capable of operating in both pre-biased and e-bias applications. It also has a minimum hFE of 40.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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