BC557CZL1 ON Semiconductor

BC557CZL1 electronic component of ON Semiconductor
BC557CZL1 ON Semiconductor
BC557CZL1 Bipolar Transistors - BJT
BC557CZL1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BC557CZL1 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC557CZL1 Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BC557CZL1
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 Ammo
Datasheet: BC557CZL1 Datasheet (PDF)
Price (USD)
87: USD 1.5225 ea
Line Total: USD 132.46 
Availability : 11638
  
Ship by Mon. 18 Aug to Fri. 22 Aug
QtyUnit Price
87$ 1.5225
88$ 1.4962
90$ 1.47
100$ 1.4438
500$ 1.4044
1000$ 1.3781

Availability 11638
Ship by Mon. 18 Aug to Fri. 22 Aug
MOQ : 87
Multiples : 1
QtyUnit Price
87$ 1.5225
88$ 1.4962
90$ 1.47
100$ 1.4438
500$ 1.4044
1000$ 1.3781

   
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Product Category
RoHS - XON
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We are delighted to provide the BC557CZL1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC557CZL1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC556B, BC557A, B, C, BC558B Amplifier Transistors PNP Silicon BC556B, BC557A, B, C, BC558B ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V V (BR)CEO (I = 2.0 mAdc, I = 0) BC556 65 C B BC557 45 BC558 30 CollectorBase Breakdown Voltage V V (BR)CBO (I = 100 Adc) BC556 80 C 50 BC557 BC558 30 EmitterBase Breakdown Voltage V V (BR)EBO 5.0 (I = 100 Adc, I = 0) BC556 E C BC557 5.0 BC558 5.0 CollectorEmitter Leakage Current I CES (V = 40 V) BC556 2.0 100 nA CES (V = 20 V) BC557 2.0 100 CES BC558 2.0 100 (V = 20 V, T = 125C) BC556 4.0 A CES A BC557 4.0 BC558 4.0 ON CHARACTERISTICS DC Current Gain h FE (I = 10 Adc, V = 5.0 V) A Series Device 90 C CE B Series Devices 150 C Series Devices 270 120 800 (I = 2.0 mAdc, V = 5.0 V) BC557 C CE A Series Device 120 170 220 B Series Devices 180 290 460 C Series Devices 420 500 800 (I = 100 mAdc, V = 5.0 V) A Series Device 120 C CE B Series Devices 180 C Series Devices 300 CollectorEmitter Saturation Voltage V V CE(sat) (I = 10 mAdc, I = 0.5 mAdc) 0.075 0.3 C B (I = 10 mAdc, I = see Note 1) 0.3 0.6 C B (I = 100 mAdc, I = 5.0 mAdc) 0.25 0.65 C B BaseEmitter Saturation Voltage V V BE(sat) (I = 10 mAdc, I = 0.5 mAdc) 0.7 C B (I = 100 mAdc, I = 5.0 mAdc) 1.0 C B BaseEmitter On Voltage V V BE(on) (I = 2.0 mAdc, V = 5.0 Vdc) 0.55 0.62 0.7 C CE (I = 10 mAdc, V = 5.0 Vdc) 0.7 0.82 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mA, V = 5.0 V, f = 100 MHz) BC556 280 C CE BC557 320 BC558 360 Output Capacitance C 3.0 6.0 pF ob (V = 10 V, I = 0, f = 1.0 MHz) CB C Noise Figure NF dB (I = 0.2 mAdc, V = 5.0 V, BC556 2.0 10 C CE R = 2.0 k , f = 1.0 kHz, f = 200 Hz) BC557 2.0 10 S BC558 2.0 10 SmallSignal Current Gain h fe (I = 2.0 mAdc, V = 5.0 V, f = 1.0 kHz) BC557 125 900 C CE A Series Device 125 260 B Series Devices 240 500 C Series Devices 450 900 1. I = 10 mAdc on the constant base current characteristics, which yields the point I = 11 mAdc, V = 1.0 V. C C CE

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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