MMBT2222AM3T5G NPN General Purpose Transistor The MMBT2222AM3T5G device is a spinoff of our popular SOT23 threeleaded device. It is designed for general purpose amplifier applications and is housed in the SOT723 surface mount www.onsemi.com package. This device is ideal for lowpower surface mount applications where board space is at a premium. COLLECTOR Features 3 Reduces Board Space NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AECQ101 BASE Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 2 EMITTER Compliant MAXIMUM RATINGS MARKING Rating Symbol Value Unit DIAGRAM CollectorEmitter Voltage V 40 Vdc CEO 3 CollectorBase Voltage V 75 Vdc SOT723 CBO AA M CASE 631AA EmitterBase Voltage V 6.0 Vdc EBO 2 STYLE 1 1 Collector Current Continuous I 600 mAdc C AA = Specific Device Code THERMAL CHARACTERISTICS M = Date Code Characteristic Symbol Max Unit Total Device Dissipation P mW D 265 FR5 Board (Note 1) mW/C T = 25C A ORDERING INFORMATION 2.1 Derate above 25C Device Package Shipping Thermal Resistance, R 470 C/W JA JunctiontoAmbient MMBT2222AM3T5G SOT723 8000/Tape & (PbFree) Reel Total Device Dissipation P 640 mW D Alumina Substrate, (Note 2) T = 25C A NSVMMBT2222AM3T5G SOT723 8000/Tape & 5.1 mW/C Derate above 25C (PbFree) Reel Thermal Resistance, 195 C/W R JA For information on tape and reel specifications, JunctiontoAmbient including part orientation and tape sizes, please Junction and Storage Temperature T , T 55 to C refer to our Tape and Reel Packaging Specifications J stg +150 Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: March, 2017 Rev. 2 MMBT2222AM3/DMMBT2222AM3T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I = 10 mAdc, I = 0) V 40 Vdc C B (BR)CEO V 75 Vdc CollectorBase Breakdown Voltage (I = 10 Adc, I = 0) C E (BR)CBO EmitterBase Breakdown Voltage (I = 10 Adc, I = 0) V 6.0 Vdc (BR)EBO E C Collector Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) I 10 nAdc CE EB(off) CEX Collector Cutoff Current I Adc CBO (V = 60 Vdc, I = 0) 0.01 CB E (V = 60 Vdc, I = 0, T = 125C) 10 CB E A Emitter Cutoff Current (V = 3.0 Vdc, I = 0) I 100 nAdc EB C EBO Base Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) I 20 nAdc CE EB(off) BL ON CHARACTERISTICS DC Current Gain h FE (I = 0.1 mAdc, V = 10 Vdc) 35 C CE (I = 1.0 mAdc, V = 10 Vdc) 50 C CE (I = 10 mAdc, V = 10 Vdc) 75 C CE (I = 10 mAdc, V = 10 Vdc, T = 55C) 35 C CE A (I = 150 mAdc, V = 10 Vdc) (Note 3) 100 300 C CE (I = 150 mAdc, V = 1.0 Vdc) (Note 3) 50 C CE (I = 500 mAdc, V = 10 Vdc) (Note 3) 40 C CE CollectorEmitter Saturation Voltage (Note 3) V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) 0.3 C B (I = 500 mAdc, I = 50 mAdc) 1.0 C B BaseEmitter Saturation Voltage (Note 3) V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 0.6 1.2 C B (I = 500 mAdc, I = 50 mAdc) 2.0 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (Note 4) f MHz T (I = 20 mAdc, V = 20 Vdc, f = 100 MHz) 300 C CE Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz) C 8.0 pF CB E obo Input Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C 25 pF EB C ibo Input Impedance h k ie (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 2.0 8.0 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) 0.25 1.25 C CE 4 Voltage Feedback Ratio h X 10 re (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 8.0 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) 4.0 C CE SmallSignal Current Gain h fe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 50 300 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) 75 375 C CE Output Admittance h mhos oe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 5.0 35 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) 25 200 C CE Collector Base Time Constant rb, C ps c (I = 20 mAdc, V = 20 Vdc, f = 31.8 MHz) 150 E CB Noise Figure (I = 100 Adc, V = 10 Vdc, R = 1.0 k , f = 1.0 kHz) NF 4.0 dB C CE S SWITCHING CHARACTERISTICS Delay Time t 10 d (V = 30 Vdc, V = 0.5 Vdc, CC BE(off) ns I = 150 mAdc, I = 15 mAdc) C B1 Rise Time t 25 r Storage Time t 225 s (V = 30 Vdc, I = 150 mAdc, CC C ns I = I = 15 mAdc) B1 B2 Fall Time t 60 f 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. f is defined as the frequency at which h extrapolates to unity. T fe www.onsemi.com 2