NJVMJD3xxT4G-VF01 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves POWER TRANSISTORS Straight Lead Version in Plastic Sleeves (1 Suffix) 3 AMPERES Lead Formed Version in 16 mm Tape and Reel (T4 Suffix) 40 AND 100 VOLTS Electrically Similar to Popular TIP31 and TIP32 Series Epoxy Meets UL 94, V0 0.125 in 15 WATTS NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 COMPLEMENTARY Qualified and PPAP Capable COLLECTOR COLLECTOR These Devices are PbFree and are RoHS Compliant 2,4 2,4 MAXIMUM RATINGS 1 1 Rating Symbol Max Unit BASE BASE CollectorEmitter Voltage V Vdc CEO MJD31, MJD32 40 3 3 MJD31C, MJD32C 100 EMITTER EMITTER CollectorBase Voltage V Vdc CB MJD31, MJD32 40 MJD31C, MJD32C 100 4 EmitterBase Voltage V 5.0 Vdc EB 1 Collector Current Continuous I 3.0 Adc 2 C 3 Collector Current Peak I 5.0 Adc CM DPAK Base Current I 1.0 Adc B CASE 369C Total Power Dissipation P W D STYLE 1 T = 25C 15 W/C C 0.12 Derate above 25C Total Power Dissipation P W D MARKING DIAGRAM 1.56 T = 25C W/C A 0.012 Derate above 25C Operating and Storage Junction Temperature T , T 65 to C J stg AYWW Range +150 J3xxG ESD Human Body Model HBM 3B V ESD Machine Model MM C V A = Site Code Stresses exceeding those listed in the Maximum Ratings table may damage Y = Year the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. WW = Work Week xx = 1C or 2C THERMAL CHARACTERISTICS G = PbFree Package Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 8.3 C/W JC ORDERING INFORMATION Thermal Resistance, JunctiontoAmbient* R 80 C/W JA See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. Lead Temperature for Soldering Purposes T 260 C L *These ratings are applicable when surface mounted on the minimum pad sizes recommended. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: February, 2017 Rev. 0 NJVMJD31CT4GVF01/DNJVMJD3xxT4G VF01 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) V Vdc CEO(sus) (I = 30 mAdc, I = 0) C B MJD31, MJD32 40 MJD31C, MJD32C 100 I Adc Collector Cutoff Current CEO (V = 40 Vdc, I = 0) CE B 50 MJD31, MJD32 (V = 60 Vdc, I = 0) CE B 50 MJD31C, MJD32C ICES Adc Collector Cutoff Current 20 (V = Rated V , V = 0) CE CEO EB Emitter Cutoff Current I mAdc EBO 1 (V = 5 Vdc, I = 0) BE C ON CHARACTERISTICS (Note 1) h DC Current Gain FE (I = 1 Adc, V = 4 Vdc) 25 C CE (I = 3 Adc, V = 4 Vdc) 10 50 C CE V Vdc CollectorEmitter Saturation Voltage CE(sat) 1.2 (I = 3 Adc, I = 375 mAdc) C B BaseEmitter On Voltage V Vdc BE(on) 1.8 (I = 3 Adc, V = 4 Vdc) C CE DYNAMIC CHARACTERISTICS f MHz Current Gain Bandwidth Product (Note 2) T 3 (I = 500 mAdc, V = 10 Vdc, f = 1 MHz) C CE test h SmallSignal Current Gain fe 20 (I = 0.5 Adc, V = 10 Vdc, f = 1 kHz) C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. f = h f . T fe test www.onsemi.com 2