Product Information

2N5551-T

2N5551-T electronic component of Rectron

Datasheet
Rectron Bipolar Transistors - BJT NPN 0.6A 160V

Manufacturer: Rectron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5917 ea
Line Total: USD 0.59

4172 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8348 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

2N5551-T
Rectron

1 : USD 0.414
10 : USD 0.3071
100 : USD 0.1736
1000 : USD 0.0886
2000 : USD 0.0759
10000 : USD 0.0609
24000 : USD 0.0563
50000 : USD 0.0552

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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2N5551 TO-92 NPN HIGH VOLTAGE TRANSISTOR For Lead Free Parts, Device Part will be Prefixed with C B E High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 160 V Collector -Base Voltage VCBO 180 V Emitter -Base Voltage VEBO 6.0 V Collector Current Continuous IC 600 mA Power Dissipation Ta=25 degC PD 625 mW Derate Above 25 deg C 5.0 mw/deg C Power Dissipation Tc=25 degC PD 1.5 W Derate Above 25 deg C 12 mw/deg C Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 125 deg C/W Junction to Ambient Rth(j-a) (1) 357 deg C/W (1) Rth (j-a) is measured with the device soldered into a typical printed circuit board ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Emitter Voltage VCEO IC=1mA,IB=0 160 - - V Collector -Base Voltage VCBO IC=100uA.IE=0 180 - - V Emitter -Base Voltage VEBO IE=10uA, IC=-0 6.0 - - V Collector-Cut off Current ICBO VCB=160V, IE=0 - - 50 nA Ta=100 deg C VCB=160V, IE=0 - - 50 uA Emitter-Cut off Current IEBO VEB=4V, IC=0 - - 50 nA DC Current Gain hFE* IC=1mA,VCE=5V 80 - - IC=10mA,VCE=5V 80 - 250 IC=50mA,VCE=5V 30 - - Collector Emitter Saturation Voltage VCE(Sat)* IC=10mA,IB=1mA - - 0.15 V IC=50mA,IB=5mA - - 0.2 V Base Emitter Saturation Voltage VBE(Sat) * IC=10mA,IB=1mA - - 1.0 V IC=50mA,IB=5mA - - 1.0 V Page 1 of 4 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Sp ecified) 2N5551 DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Dy namic Characteristics Small Signal Current Gain hfe IC=1mA, VCE=10V 50 - 200 f=1KHz Transition Frequency ft VCE=10V,IC=10mA, 100 - 300 MHz f=100MHz Outp ut Cap acitance Cob VCB=10V, IE=0 - - 6.0 pF f=1MHz Inp ut Cap acitance Cib VEB=0.5V, IC=0 - - 20 pF f=1MHz Noise Figure NF VCE=5V, IC=250uA - - 8.0 dB R=1kohm, f=10Hz to 15.7kHz *Pulse Test: Pulse Width=300us, Duty Cycle=2% Packaging Information T & A: Tape and Ammo Pack T & R: Tape and Reel Bulk: Loose in Poly bags Tube: Tube and Ammo Pack k: 1.000 Std. Packing Inner Carton Outer Carton Package/Case Packaging Type Size L x W x H Gross Weight Size L x W x H Gross Weight Type Qty Qty Qty (cm) (Kg) (cm) (Kg) Bulk 1,000 5K 19x19x8 1.10 80K 43x40x35 20.0 TO-92 T&A 2,000 2K 32x4.5x20 0.70 40K 43x40x35 15.20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Rectron Semiconductor

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