2SC5585TL ROHM

2SC5663 / 2SC5585 Datasheet Low frequency transistor (12V, 500mA) llOutline Parameter Value SOT-723 SOT-416 V 12V CEO I 500mA C 2SC5663 2SC5585 (VMT3) (EMT3) llFeatures 1)High current 2)Low V . CE(sat) V 250mV at I =200mA/I =10mA CE(sat) C B llApplication LOW FREQUENCY AMPLIFIER, DRIVER llInner circuit 2SC5663 2SC5585 llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 2SC5663 1212 T2L 180 8 8000 BX (VMT3) SOT-416 2SC5585 1616 TL 180 8 3000 BX (EMT3) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/7 20150904 - Rev.003 2SC5663 / 2SC5585 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 15 V CBO Collector-emitter voltage V 12 V CEO Emitter-base voltage V 6 V EBO I 500 mA C Collector current *1 I 1.0 A CP 2SC5663 150 *2 Power dissipation P mW D 2SC5585 150 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 15 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 12 - - V CEO C voltage Emitter-base breakdown voltage BV I = 10A 6 - - V EBO E Collector cut-off current I V = 15V - - 100 nA CBO CB I Emitter cut-off current V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 200mA, I = 10mA - 90 250 mV CE(sat) C B DC current gain h V = 2V, I = 10mA 270 - 680 - FE CE C V = 2V, I = -10mA, CE E Transition frequency f - 320 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 7.5 - pF ob f = 1MHz *1 Pw=1ms, Single Pulse. *2 Each terminal mounted on a reference land www.rohm.com 2/7 20150904 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.