X-On Electronics has gained recognition as a prominent supplier of 2SC5585TL bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. 2SC5585TL bipolar transistors - bjt are a product manufactured by ROHM. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

2SC5585TL

2SC5585TL electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.2SC5585TL
Manufacturer: ROHM
Category:Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 12 V 500 mA 320MHz 150 mW Surface Mount EMT3
Datasheet: 2SC5585TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0616 ea
Line Total: USD 0.62

Availability - 21747
Ships to you between
Fri. 07 Jun to Wed. 12 Jun
MOQ: 10  Multiples: 10
Pack Size: 10

2SC5585TL More Buying Options & Price Grid(s)

Availability Price Quantity
6790 - WHS 1


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4083
10 : USD 0.3232
100 : USD 0.1817
1000 : USD 0.1323
3000 : USD 0.1093
9000 : USD 0.1046

827 - WHS 2


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 298
Multiples : 1
298 : USD 0.3423
500 : USD 0.3299

21747 - WHS 3


Ships to you between
Fri. 07 Jun to Wed. 12 Jun

MOQ : 10
Multiples : 10
10 : USD 0.0616
100 : USD 0.0545
300 : USD 0.0509
3000 : USD 0.0411
6000 : USD 0.039
9000 : USD 0.038

5820 - WHS 4


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 298
Multiples : 1
298 : USD 0.3423
500 : USD 0.3299
1000 : USD 0.3191
2500 : USD 0.3098
5000 : USD 0.3015

23323 - WHS 5


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 392
Multiples : 1
392 : USD 0.1039
500 : USD 0.1028
1000 : USD 0.0849
2000 : USD 0.0793
3000 : USD 0.0788
6000 : USD 0.0784
12000 : USD 0.0702

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif

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Additional Infomation About Product

2SC5663 / 2SC5585 Datasheet Low frequency transistor (12V, 500mA) llOutline Parameter Value SOT-723 SOT-416 V 12V CEO I 500mA C 2SC5663 2SC5585 (VMT3) (EMT3) llFeatures 1)High current 2)Low V . CE(sat) V 250mV at I =200mA/I =10mA CE(sat) C B llApplication LOW FREQUENCY AMPLIFIER, DRIVER llInner circuit 2SC5663 2SC5585 llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 2SC5663 1212 T2L 180 8 8000 BX (VMT3) SOT-416 2SC5585 1616 TL 180 8 3000 BX (EMT3) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/7 20150904 - Rev.003 2SC5663 / 2SC5585 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 15 V CBO Collector-emitter voltage V 12 V CEO Emitter-base voltage V 6 V EBO I 500 mA C Collector current *1 I 1.0 A CP 2SC5663 150 *2 Power dissipation P mW D 2SC5585 150 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 15 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 12 - - V CEO C voltage Emitter-base breakdown voltage BV I = 10A 6 - - V EBO E Collector cut-off current I V = 15V - - 100 nA CBO CB I Emitter cut-off current V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 200mA, I = 10mA - 90 250 mV CE(sat) C B DC current gain h V = 2V, I = 10mA 270 - 680 - FE CE C V = 2V, I = -10mA, CE E Transition frequency f - 320 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 7.5 - pF ob f = 1MHz *1 Pw=1ms, Single Pulse. *2 Each terminal mounted on a reference land www.rohm.com 2/7 20150904 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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