2SCR553P5 Datasheet Middle Power Transistors (50V / 2A) llOutline SOT-89 Parameter Value SC-62 V 50V CEO I 2A C MPT3 llFeatures llInner circuit 1)Low saturation voltage, typically V =350mV(Max.) CE(sat) (I /I =700mA/35mA) C B 2)High speed switching llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 2SCR553P5 4540 T100 180 12 1000 NG (MPT3) www.rohm.com 1/6 20170605 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.2SCR553P5 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 6 V EBO I 2 A C Collector current *1 I 4 A CP *2 P 0.5 W D Power dissipation *3 P 2.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 100A 6 - - V EBO E Collector cut-off current I V = 50V - - 1.0 A CBO CB I Emitter cut-off current V = 4V - - 1.0 A EBO EB *4 Collector-emitter saturation voltage I = 700mA, I = 35mA - 130 350 mV V C B CE(sat) DC current gain h V = 2V, I = 50mA 180 - 450 - FE CE C V = 10V, I = -300mA, CE E *4 Transition frequency - 360 - MHz f T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 12 - pF ob f = 1MHz I = 1A, C t Turn-On time - 45 - ns on I = 100mA, B1 I = -100mA, B2 t Storage time - 420 - ns stg V 10V, CC R = 10 L Fall time t - 75 - ns f See test circuit *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board.(40400.7mm) *4 Pulsed www.rohm.com 2/6 20170605 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.