Product Information

2N6547

2N6547 electronic component of SPC Technology

Datasheet
Bipolar Transistors - BJT NPN 850Vcev 450Vcex 400Vceo 175W Trans

Manufacturer: SPC Technology
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.8406 ea
Line Total: USD 7.84

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

2N6547
SPC Technology

1 : USD 16.0933
10 : USD 10.3512
100 : USD 8.1494
250 : USD 6.3781
500 : USD 4.9725
1000 : USD 4.4687

     
Manufacturer
Product Category
Transistor Polarity
Packaging
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Av Current Ic
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Ic @ Vce Sat
Current Ic Continuous A Max
Current Ic Hfe
Fall Time @ Ic
Full Power Rating Temperature
Gain Bandwidth Ft Min
Hfe Min
No. Of Transistors
Operating Temperature Min
Operating Temperature Range
Power Dissipation Ptot Max
Termination Type
Voltage Vces
LoadingGif

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2N6546 2N6547 www.centralsemi.com NPN SILICON DESCRIPTION: POWER TRANSISTOR The CENTRAL SEMICONDUCTOR 2N6546, 2N6547 types are NPN Silicon Power Transistors designed for high voltage, high current, applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) C SYMBOL 2N6546 2N6547 UNITS Collector-Emitter Voltage V 650 850 V CEV Collector-Emitter Voltage V 350 450 V CEX Collector-Emitter Voltage V 300 400 V CEO Emitter-Base Voltage V 9.0 V EBO Continuous Collector Current I 15 A C Peak Collector Current I 30 A CM Continuous Emitter Current I 25 A E Peak Emitter Current I 50 A EM Continuous Base Current I 10 A B Peak Base Current I 20 A BM Power Dissipation P 175 W D Power Dissipation, T=100C P 100 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 1.0 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C 2N6546 2N6547 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =Rated V , V=1.5V - 1.0 - 1.0 mA CEV CE CEV BE I V =Rated V , V =1.5V, T=100C - 4.0 - 4.0 mA CEV CE CEV BE C I V =Rated V , R =50, T=100C - 5.0 - 5.0 mA CER CE CEV BE C I V=9.0V - 1.0 - 1.0 mA EBO EB BV V =Rated V , I =8.0A, T=100C 350 - 450 - V CEX CL CEX C C BV V =Rated V -100V, I =15A, T=100C 200 - 300 - V CEX CL CEO C C BV I=100mA 300 - 400 - V CEO C V I =10A, I=2.0A - 1.5 - 1.5 V CE(SAT) C B V I =10A, I =2.0A, T=100C - 2.5 - 2.5 V CE(SAT) C B C V I =15A, I=3.0A - 5.0 - 5.0 V CE(SAT) C B V I =10A, I=2.0A - 1.6 - 1.6 V BE(SAT) C B V I =10A, I =2.0A, T=100C - 1.6 - 1.6 V BE(SAT) C B C h V =2.0V, I=5.0A 12 60 12 60 FE CE C h V =2.0V, I=10A 6.0 30 6.0 30 FE CE C R2 (12-December 2011)2N6546 2N6547 NPN SILICON POWER TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN TYP MAX UNITS f V =10V, I =500mA, f=1.0MHz 6.0 28 MHz t CE C C V =10V, I =0, f=1.0MHz 125 500 pF ob CB E I V =100V, t=1.0s 0.2 A s/b CE Resistive Load t 0.05 s d V =250V, I =10A, CC C t 1.0 s r I =I =2.0A, t =100s, B1 B2 p t 4.0 s s Duty Cycle2.0% t 0.7 s f Inductive Load (Clamped) t 5.0 s V =Rated V , I =10A, s CL CEX C t 1.5 s I =2.0A, V =5.0V, T =100C f B1 BE C t V =Rated V , I =10A, 2.0 s s CL CEX C t I =2.0A, V =5.0V, T =25C 0.9 s f B1 BE C TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R2 (12-December 2011) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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