2N5195 STMicroelectronics

2N5195 Low voltage PNP power transistor Features Low saturation voltage PNP transistor Application Audio, power linear and switching equipment 1 2 Description 3 SOT-32 The device is manufactured in planar technology with base island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The Figure 1. Internal schematic diagram NPN type is the 2N5192. Table 1. Devices summary Order code Marking Package Packaging 2N5195 2N5195 SOT-32 Tube November 2009 Doc ID 5074 Rev 4 1/9 www.st.com 9Electrical ratings 2N5195 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) -80 V CBO E V Collector-emitter voltage (I = 0) -80 V CEO B V Emitter-base voltage (I = 0) -5 V EBO C I Collector current -4 A C I Collector peak current -7 A CM I Base current -1 A B P Total dissipation at T = 25 C 40 W TOT case T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case Max 3.12 C/W thJC R Thermal resistance junction-ambient Max 100 C/W thJA 2/9 Doc ID 5074 Rev 4