3STL2540 STMicroelectronics

3STL2540 Low voltage high performance PNP power transistor Datasheet production data Features Very low collector-emitter saturation voltage High current gain characteristic Small, thin, leadless SMD plastic package with 3 excellent thermal behavior Applications 2 1 1 2 Power management PowerFLAT 2 x 2 3L DC-DC converters Description This device is an PNP transistor manufactured Figure 1. Internal schematic diagram using new low voltage planar technology with double metal process. The result is a transistor which boasts exceptionally high gain performance coupled with very low saturation voltage. Table 1. Device summary Order code Marking Package Packaging 3STL2540 L2540 PowerFLAT 2 x 2 Tape and reel May 2012 Doc ID 022059 Rev 2 1/11 This is information on a product in full production. www.st.com 11Absolute maximum ratings 3STL2540 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) -40 V CBO E V Collector-emitter voltage (I = 0) -40 V CEO B V Emitter-base voltage (I = 0) -6 V EBO C I Collector current -5 A C I Collector peak current (t < 5 ms) -10 A CM P I Base current -0.5 A B I Base peak current (t < 5 ms) -1 A BM P (1) P Total dissipation at T = 25 C 1.2 W TOT A T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J 1. Device mounted on a PCB area of 1 cm Table 3. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance junction-ambient max 104 C/W thJA (2) R Thermal resistance junction-ambient max 75 C/W thJA R Thermal resistance junction-case max 45 C/W thJC 1. Device mounted on a PCB area of 1 cm 2. Device mounted on a PCB area of 6 cm 2/11 Doc ID 022059 Rev 2