BUL381D STMicroelectronics

BUL381D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLEL 3 2 COLLECTOR-EMITTER DIODE 1 APPLICATIONS TO-220 ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES DESCRIPTION INTERNAL SCHEMATIC DIAGRAM The BUL381D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 800 V CES BE V Collector-Emitter Voltage (I = 0) 400 V CEO B V Emitter-Base Voltage (I = 0) 9 V EBO C I Collector Current 5 A C I Collector Peak Current (t < 5 ms) 8 A CM p I Base Current 2 A B I Base Peak Current (t < 5 ms) 4 A BM p o P Total Dissipation at T = 25 C70 W tot c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/6 July 2003 BUL381D THERMAL DATA o R Thermal Resistance Junction-Case Max 1.78 C/W thj-case o R Thermal Resistance Junction-Ambient Max 62.5 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 800 V 100 A CES CE o Current (V = 0) V = 800 V T = 125 C 500 A BE CE j I Collector Cut-off V = 400 V 250 A CEO CE Current (I = 0) B V * Collector-Emitter I = 100 mA L = 25 mH 400 V CEO(sus) C Sustaining Voltage (IB = 0) VEBO Emitter-Base Voltage IE = 10 mA 9 V (I = 0) C V * Collector-Emitter I = 1 A I = 0.2 A 0.5 V CE(sat) C B Saturation Voltage I = 2 A I = 0.4 A 0.7 V C B I = 3 A I = 0.75 A 1.1 V C B V * Base-Emitter I = 1 A I = 0.2 A 1.1 V BE(sat) C B Saturation Voltage I = 2 A I = 0.4 A 1.2 V C B h * DC Current Gain I = 2 A V = 5 V 8 FE C CE I = 10 mA V = 5 V 10 C CE RESISTIVE LOAD I = 2 A V = 250 V t = 30 s C CC p t Storage Time 1.5 2.5 s s I = - I = 0.4 A B1 B2 t Fall Time 0.8 s f INDUCTIVE LOAD I = 2 A I = 0.4 A C B1 t Storage Time 1.3 s s V = -5 V R = 0 BE(off) BB t Fall Time 100 ns f V = 250 V L = 200 H CL o T = 125 C j V Diode Forward Voltage I = 2 A 2.5 V f C * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area Derating Curve 2/6