BUL58D STMicroelectronics

BUL58D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS 3 VERY HIGH SWITCHING SPEED 2 o FULLY CHARACTERISED AT 125 C 1 HIGH RUGGEDNESS INTEGRATED ANTIPARALLEL TO-220 COLLECTOR-EMITTER DIODE APPLICATIONS ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING INTERNAL SCHEMATIC DIAGRAM SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL58D is manufactured using high voltage Multi Epitaxial Planar technology to enhance switching speeds while maintaining a wide RBSOA. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 800 V CES BE V Collector-Emitter Voltage (I = 0) 450 V CEO B V Emitter-Base Voltage (I = 0) 9 V EBO C I Collector Current 8 A C ICM Collector Peak Current (tp < 5 ms) 16 A I Base Current 4 A B I Base Peak Current (t < 5 ms) 8 A BM p o P Total Dissipation at T = 25 C85 W tot c o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j 1/6 June 2001 BUL58D THERMAL DATA o R Thermal Resistance Junction-Case Max 1.47 C/W thj-case o R Thermal Resistance Junction-Ambient Max 62.5 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 800 V 200 A CES CE o Current (V = 0) V = 800 V T = 125 C 500 A BE CEO j I Collector Cut-off V = 450 V 200 A CEO CE Current (I = 0) B V Collector-Emitter I = 100 mA L = 25 mH 450 V CEO(sus) C Sustaining Voltage V Emitter-Base Voltage I = 10 mA 9 V EBO E (IC = 0) V * Collector-Emitter I = 4 A I = 0.8 A 1.5 V CE(sat) C B Saturation Voltage I = 5 A I = 1 A 2 V C B V * Base-Emitter I = 4 A I = 0.8 A 1.3 V BE(sat) C B Saturation Voltage IC = 5 A IB = 1 A 1.5 V h * DC Current Gain I = 5 A V = 5 V 5 FE C CE I = 500 mA V = 5 V 38 C CE INDUCTIVE LOAD I = 2 A I = 0.4 A C B1 t Storage Time 1 1.8 s s V = -5 V R = 0 BE(off) BB t Fall Time 90 180 ns f V = 250 V L = 200 H CL INDUCTIVE LOAD I = 2 A I = 0.4 A C B1 t Storage Time 1.5 s s V = -5 V R = 0 BE(off) BB t Fall Time 180 ns f V = 250 V L = 200 H CL o T = 125 C j V Diode Forward Voltage I = 3 A 3 V f C * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Areas Derating Curve 2/6