BULD741T4 STMicroelectronics

BULD741 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 3 2 1 Description 1 The device is manufactured using high voltage DPAK IPAK Multi-Epitaxial Planar technology for high TO-252 TO-251 switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current Figure 1. Internal schematic diagram level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. Applications Electronic ballast for fluorescent lighting Switch mode power supplies. Table 1. Device summary Order codes Marking Package Packaging BULD741T4 BULD741 DPAK Tape & reel BULD741-1 BULD741 IPAK Tube July 2007 Rev 2 1/11 www.st.com 11Electrical ratings BULD741 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 1050 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V V Emitter-base voltage (I = 0, I = 2A, t < 10ms) V EBO (BR)EBO C B P I Collector current 2.5 A C I Collector peak current (t < 5ms) 5 A CM P I Base current 1.5 A B I Base peak current (t < 5ms) 3 A BM P P Total dissipation at T = 25C 30 W tot c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 4.16 C/W thj-case 2/11