X-On Electronics has gained recognition as a prominent supplier of BUXD87T4 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BUXD87T4 Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BUXD87T4 STMicroelectronics

BUXD87T4 electronic component of STMicroelectronics
BUXD87T4 STMicroelectronics
BUXD87T4 Bipolar Transistors - BJT
BUXD87T4  Semiconductors

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See Product Specifications
Part No. BUXD87T4
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: STMicroelectronics Bipolar Transistors - BJT
Datasheet: BUXD87T4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8332 ea
Line Total: USD 1.83 
Availability - 19
Ship by Tue. 24 Jun to Fri. 27 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19
Ship by Tue. 24 Jun to Fri. 27 Jun
MOQ : 1
Multiples : 1
1 : USD 1.8332
10 : USD 1.4938
30 : USD 0.9941
100 : USD 0.7811
500 : USD 0.715
1000 : USD 0.6784

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUXD87T4 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUXD87T4 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BUXD87 HIGH VOLTAGE NPN POWER TRANSISTOR REVERSE PINS OUT Vs STANDARD IPAK/DPAK PACKAGE HIGH VOLTAGE CAPABILITY HIGH DC CURRENT GAIN THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX-1 ) 3 SURFACE-MOUNTING DPAK (TO-252) 3 2 1 POWER PACKAGE IN TAPE & REEL 1 (SUFFIXT4 ) APPLICATIONS: IPAK DPAK SWITCH MODE POWER SUPPLIES TO-251 TO-252 GENERAL PURPOSE SWITCHING (Suffix-1 ) (SuffixT4 ) DESCRIPTION The BUXD87 is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = -1.5V) 1000 V CEV BE VCEO Collector-Emitter Voltage (IB = 0) 450 V V Emitter-Base Voltage (I = 0) 5 V EBO C I Collector Current 0.5 A C I Collector Peak Current (t < 5 ms) 1 A CM p IB Base Current 0.3 A I Base Peak Current (t < 5 ms) 0.6 A BM p o P Total Dissipation at T = 25 C20 W tot c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/6 April 1999BUXD87 THERMAL DATA o R Thermal Resistance Junction-case Max 6.25 C/W thj-case o R Thermal Resistance Junction-ambient Max 100 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 1000 V 100 A CEV CE o Current (V = -1.5V) V = 1000 V T = 125 C 1 mA BE CE j I Emitter Cut-off Current V = 5 V 1 mA EBO EB (I = 0) C V Collector-Emitter I = 100 mA 450 V CEO(sus) C Sustaining Voltage V Collector-Base I = 10 mA 5 V BEO C Sustaining Voltage V * Collector-Emitter I = 0.1 A I = 0.01 A 0.8 V CE(sat) C B Saturation Voltage I = 0.2 A I = 0.02 A 1 V C B V * Base-Emitter I = 0.2 A I = 0.02 A 1 V BE(sat) C B Saturation Voltage h * DC Current Gain I = 50 mA V = 5 V 50 FE C CE I = 40 mA V = 5 V 12 C CE f Transition Frequency I = 50 mA V = 10 V f=1MHz 20 MHz T C CE RESISTIVE LOAD V = 250 V I = 200 mA CC C t Storage Time I = 40 mA I = -80 mA 4.5 s s B1 B2 t Fall Time t = 20 s 0.5 s f p * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area Derating Curves 2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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