Product Information

HD1750FX

HD1750FX electronic component of STMicroelectronics

Datasheet
Transistors Bipolar - BJT NPN High Voltage +800Vceo Max.
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 1.8832 ea
Line Total: USD 5.65

49 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 3  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
49 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

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HD1750FX
STMicroelectronics

1 : USD 1.8832
10 : USD 1.8173
25 : USD 1.7664
300 : USD 1.7529
600 : USD 1.7445
1200 : USD 1.7096
2700 : USD 1.7096
5100 : USD 1.7096

18 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

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HD1750FX
STMicroelectronics

1 : USD 6.149
3 : USD 5.538
4 : USD 4.368
11 : USD 4.134

49 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 3
Multiples : 1

Stock Image

HD1750FX
STMicroelectronics

3 : USD 1.8832
10 : USD 1.8173
25 : USD 1.7664
300 : USD 1.7529
600 : USD 1.7445
1200 : USD 1.7096

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

HD1750FX HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH DEFINITION AND NEW SUPER-SLIM CRT DISPLAYS STATE-OF-THE-ART TECHNOLOGY: Figure 1: Package DIFFUSED COLLECTORENHANCED GENERATIO EHVS1 WIDER RANGE OF OPTIMUM DRIVE CONDITIONS LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION FULLY INSULATED POWER PACKAGE U.L. COMPLIANT APPLICATIONS ISOWATT218FX HORIZONTAL DEFLECTION OUTPUT FOR DIGITAL TV, HDTV AND HIGH-END MONITORS Figure 2: Internal Schematic Diagram DESCRIPTION The device is manufactured using Diffused Collector in Planar technology adoptingEnhance High Voltage Structur (EHVS1) developed to fit High-Definition CRT displays. The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Table 1: Order Codes Part Number Marking Package Packaging HD1750FX HD1750FX ISOWATT218FX TUBE Rev. 2 December 2005 1/8HD1750FX Table 2: Absolute Maximum Ratings Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 1700 V CES BE V Collector-Emitter Voltage (I = 0) 800 V CEO B V Emitter-Base Voltage (I = 0) 10 V EBO C I Collector Current 24 A C I Collector Peak Current (t < 5ms) 36 A CM p I Base Current 12 A B I Base Peak Current (t < 5ms) 18 A BM p o P Total Dissipation at T = 25 C 75 W tot C Insulation Withstand Voltage (RMS) from All Three Leads to V 2500 V ins External Heatsink T Storage Temperature -65 to 150 C stg T Max. Operating Junction Temperature 150 C J Table 3: Thermal Data o R Thermal Resistance Junction-Case Max 1.67 thj-case C/W o Table 4: Electrical Characteristics (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off Current V = 1700 V 0.2 mA CES CE (V = 0) o 2 mA BE V = 1700 V T = 125 C CE C I Emitter Cut-off Current V = 5 V 10 A EBO EB (I = 0) C V * Collector-Emitter I = 10 mA 800 V CEO(sus) C Sustaining Voltage (I = 0 ) B V Emitter-Base Voltage I = 10 mA 10 V EBO E (I = 0 ) C V * Collector-Emitter I = 12 A I = 3 A 3 V CE(sat) C B Saturation Voltage V * Base-Emitter Saturation I = 12 A I = 3 A 0.95 1.5 V BE(sat) C B Voltage h DC Current Gain I = 1 A V = 5 V 30 FE C CE 6.5 9.5 I = 12 A V = 5 V C CE INDUCTIVE LOAD I = 12 A f = 31250 Hz C h t Storage Time 3.1 3.8 s s I = 1.9 A I = -8.1 A B(on) B(off) t Fall Time 350 500 ns f V = 1320 V V = -2.7 V CE(fly) BE(off) L = 0.8 H BB(off) INDUCTIVE LOAD I = 6.5 A f = 100 kHz C h t s Storage Time 1.7 2 s I = 1.2 A I = -5.85 A B(on) B(off) t Fall Time 180 250 ns f V = 1220 V V = -2.7 V CE(fly) BE(off) L = 0.25 H BB(off) * Pulsed: Pulsed duration = 300 ms, duty cycle 1.5 %. 2/8

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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