HD1750FX STMicroelectronics

HD1750FX HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH DEFINITION AND NEW SUPER-SLIM CRT DISPLAYS STATE-OF-THE-ART TECHNOLOGY: Figure 1: Package DIFFUSED COLLECTORENHANCED GENERATIO EHVS1 WIDER RANGE OF OPTIMUM DRIVE CONDITIONS LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION FULLY INSULATED POWER PACKAGE U.L. COMPLIANT APPLICATIONS ISOWATT218FX HORIZONTAL DEFLECTION OUTPUT FOR DIGITAL TV, HDTV AND HIGH-END MONITORS Figure 2: Internal Schematic Diagram DESCRIPTION The device is manufactured using Diffused Collector in Planar technology adoptingEnhance High Voltage Structur (EHVS1) developed to fit High-Definition CRT displays. The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Table 1: Order Codes Part Number Marking Package Packaging HD1750FX HD1750FX ISOWATT218FX TUBE Rev. 2 December 2005 1/8HD1750FX Table 2: Absolute Maximum Ratings Symbol Parameter Value Unit V Collector-Emitter Voltage (V = 0) 1700 V CES BE V Collector-Emitter Voltage (I = 0) 800 V CEO B V Emitter-Base Voltage (I = 0) 10 V EBO C I Collector Current 24 A C I Collector Peak Current (t < 5ms) 36 A CM p I Base Current 12 A B I Base Peak Current (t < 5ms) 18 A BM p o P Total Dissipation at T = 25 C 75 W tot C Insulation Withstand Voltage (RMS) from All Three Leads to V 2500 V ins External Heatsink T Storage Temperature -65 to 150 C stg T Max. Operating Junction Temperature 150 C J Table 3: Thermal Data o R Thermal Resistance Junction-Case Max 1.67 thj-case C/W o Table 4: Electrical Characteristics (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off Current V = 1700 V 0.2 mA CES CE (V = 0) o 2 mA BE V = 1700 V T = 125 C CE C I Emitter Cut-off Current V = 5 V 10 A EBO EB (I = 0) C V * Collector-Emitter I = 10 mA 800 V CEO(sus) C Sustaining Voltage (I = 0 ) B V Emitter-Base Voltage I = 10 mA 10 V EBO E (I = 0 ) C V * Collector-Emitter I = 12 A I = 3 A 3 V CE(sat) C B Saturation Voltage V * Base-Emitter Saturation I = 12 A I = 3 A 0.95 1.5 V BE(sat) C B Voltage h DC Current Gain I = 1 A V = 5 V 30 FE C CE 6.5 9.5 I = 12 A V = 5 V C CE INDUCTIVE LOAD I = 12 A f = 31250 Hz C h t Storage Time 3.1 3.8 s s I = 1.9 A I = -8.1 A B(on) B(off) t Fall Time 350 500 ns f V = 1320 V V = -2.7 V CE(fly) BE(off) L = 0.8 H BB(off) INDUCTIVE LOAD I = 6.5 A f = 100 kHz C h t s Storage Time 1.7 2 s I = 1.2 A I = -5.85 A B(on) B(off) t Fall Time 180 250 ns f V = 1220 V V = -2.7 V CE(fly) BE(off) L = 0.25 H BB(off) * Pulsed: Pulsed duration = 300 ms, duty cycle 1.5 %. 2/8