Product Information

MJD31CT4-A

MJD31CT4-A electronic component of STMicroelectronics

Datasheet
Transistors Bipolar - BJT LO VLT NPN PWR TRANS
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.5012 ea
Line Total: USD 1253

12125 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 2500  Multiples: 2500
Pack Size: 2500

 More Buying Options & Price Grid(s)

Availability Price Quantity
67 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

MJD31CT4-A
STMicroelectronics

1 : USD 0.8195
10 : USD 0.7363
25 : USD 0.5542

12125 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2500
Multiples : 2500

Stock Image

MJD31CT4-A
STMicroelectronics

2500 : USD 0.5487
5000 : USD 0.5034
10000 : USD 0.4957

12125 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2500
Multiples : 2500

Stock Image

MJD31CT4-A
STMicroelectronics

2500 : USD 0.5012

67 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 15
Multiples : 1

Stock Image

MJD31CT4-A
STMicroelectronics

15 : USD 0.5604

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Additional Infomation About Product

MJD31CT4-A Low voltage NPN power transistor Datasheet production data Features This device is qualified for automotive application TAB Surface-mounting TO-252 power package in tape and reel 3 Complementary to the PNP type MJD32C 1 Application DPAK General purpose linear and switching TO-252 equipment Description Figure 1. Internal schematic diagram The device is manufactured in planar technology with base island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Table 1. Device summary Order code Marking Package Packaging MJD31CT4-A MJD31C DPAK Tape and reel June 2012 Doc ID 13473 Rev 4 1/13 This is information on a product in full production. www.st.com 13Electrical ratings MJD31CT4-A 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) 100 V CBO E V Collector-emitter voltage (I = 0) 100 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 3 A C I Collector peak current 5 A CM I Base current 1 A B P Total dissipation at T = 25 C 15 W TOT c T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 8.3 C/W thJC (1) R Thermal resistance junction-pcb max 50 C/W thJPCB 1. When mounted on FR-4 board of 1 inch, 2 oz Cu. 2/13 Doc ID 13473 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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