Product Information

MJD350T4

MJD350T4 electronic component of STMicroelectronics

Datasheet
Bipolar (BJT) Transistor PNP 300 V 500 mA 15 W Surface Mount DPAK
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 0.4511 ea
Line Total: USD 1.35

4637 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 3  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
80 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

MJD350T4
STMicroelectronics

1 : USD 0.5485
10 : USD 0.4459
30 : USD 0.4025
100 : USD 0.3492
500 : USD 0.3256
1000 : USD 0.3099

4637 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3
Multiples : 1

Stock Image

MJD350T4
STMicroelectronics

3 : USD 0.4511
25 : USD 0.403
53 : USD 0.3094
146 : USD 0.2938
2500 : USD 0.2899

4850 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2500
Multiples : 2500

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MJD350T4
STMicroelectronics

2500 : USD 0.3124
5000 : USD 0.3101
10000 : USD 0.3039

825 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 30
Multiples : 1

Stock Image

MJD350T4
STMicroelectronics

30 : USD 0.2978
100 : USD 0.2918

Read More Specifications

     
Manufacturer
Product Category
Polarisation
Case
Mounting
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Category
Brand Category
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Additional Infomation About Product

MJD340 MJD350 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MEDIUM VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIXT4 ) 3 ELECTRICAL SIMILAR TO MJE340 AND MJE350 1 APPLICATIONS SOLENOID/RELAY DRIVERS DPAK GENERAL PURPOSE SWITCHING AND TO-252 AMPLIFIER (SuffixT4 ) DESCRIPTION The MJD340 and MJD350 form complementary NPN - PNP pairs. They are manufactured using Medium Voltage INTERNAL SCHEMATIC DIAGRAM Epitaxial-Planar technology, resulting in a rugged high performance cost-effective transistor. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN MJD340 PNP MJD350 V Collector-Base Voltage (IE = 0) 300 V CBO V Collector-Emitter Voltage (I = 0) 300 V CEO B V Emitter-Base Voltage (IC = 0) 3 V EBO I Collector Current 0.5 A C o I Collector Peak Current (tp = 25 C) 0.75 A CM o P Total Power Dissipation at T 25 C 15 W tot case o T Storage Temperature -65 to 150 C stg o T Max Operating Junction Temperature 150 C j For PNP types voltage and current values are negative. 1/5 September 2003 MJD340 / MJD350 THERMAL DATA o R Thermal Resistance Junction-case Max 8.33 C/W thj-case o R Thermal Resistance Junction-ambient Max 100 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 300 V 0.1 mA CBO CB Current (v = 0) BE I Emitter Cut-off Current V = 3 V 0.1 mA EBO EB (I = 0) C V * Collector-Emitter I = 1 mA 300 V CEO(sus) C Sustaining Voltage (IB = 0) h * DC Current Gain I = 50 mA V = 10 V 30 240 FE C CE * Pulsed: Pulse duration = 300 s, duty cycle 2 % For PNP type voltage and current values are negative. Safe Operating Area Derating Curve 2/5

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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