MJE182 STMicroelectronics

MJE182 Low voltage high speed switching NPN transistor Features High speed switching NPN device Applications Audio amplifier High speed switching applications Description SOT-32 This device is an NPN low voltage transistor manufactured using epitaxial planar technology and housed in a SOT-32 plastic package. It is Figure 1. Internal schematic diagram designed for low power audio amplifiers and low current, high speed switching applications. Table 1. Device summary Order code Marking Package Packaging MJE182 MJE182 SOT-32 Tube August 2011 Doc ID 022074 Rev 1 1/7 www.st.com 7 Obsolete Product(s) - Obsolete Product(s)Electrical ratings MJE182 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (I = 0) 80 V CEO B V Collector-base voltage (I = 0) 100 V CBO E V Base-emitter voltage (I = 0) 7 V EBO C I Collector current 3 A C I Collector peak current (t < 5 ms) 6 A CM P I Base current 1 A B I Base peak current (t < 5 ms) 2 A BM P P Total dissipation at T 25 C 12.5 W TOT c T Storage temperature -65 to 150 stg C T Total power dissipation at T 25 C 150 J c Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 10 C/W thJC R Thermal resistance junction-ambient max 83.3 C/W th-amb 2/7 Doc ID 022074 Rev 1 Obsolete Product(s) - Obsolete Product(s)