Product Information

MJE182

Name: MJE182
Brand: STMicroelectronics
SKU: MJE182_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

MJE182 electronic component of STMicroelectronics

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Datasheet

TRANSISTOR,NPN,80V,3A,SOT32

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.3276 ea
Line Total: USD 0.33

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Global Stock Ships to you between Fri. 26 Apr to Thu. 02 May MOQ : 1 Multiples : 1 MJE182 STMicroelectronics	1 : USD 1.1286 10 : USD 0.9967 100 : USD 0.7638

0 - Global Stock Ships to you between Fri. 26 Apr to Thu. 02 May MOQ : 1 Multiples : 1 MJE182 STMicroelectronics	1 : USD 0.451

0 - Global Stock Ships to you between Fri. 26 Apr to Thu. 02 May MOQ : 1 Multiples : 1 MJE182 STMicroelectronics	1 : USD 0.3276 5 : USD 0.3218 50 : USD 0.2866 250 : USD 0.2398 1000 : USD 0.213 2500 : USD 0.2071

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Additional Infomation About Product

MJE182 Low voltage high speed switching NPN transistor Features High speed switching NPN device Applications Audio amplifier High speed switching applications Description SOT-32 This device is an NPN low voltage transistor manufactured using epitaxial planar technology and housed in a SOT-32 plastic package. It is Figure 1. Internal schematic diagram designed for low power audio amplifiers and low current, high speed switching applications. Table 1. Device summary Order code Marking Package Packaging MJE182 MJE182 SOT-32 Tube August 2011 Doc ID 022074 Rev 1 1/7 www.st.com 7 Obsolete Product(s) - Obsolete Product(s)Electrical ratings MJE182 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (I = 0) 80 V CEO B V Collector-base voltage (I = 0) 100 V CBO E V Base-emitter voltage (I = 0) 7 V EBO C I Collector current 3 A C I Collector peak current (t < 5 ms) 6 A CM P I Base current 1 A B I Base peak current (t < 5 ms) 2 A BM P P Total dissipation at T 25 C 12.5 W TOT c T Storage temperature -65 to 150 stg C T Total power dissipation at T 25 C 150 J c Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 10 C/W thJC R Thermal resistance junction-ambient max 83.3 C/W th-amb 2/7 Doc ID 022074 Rev 1 Obsolete Product(s) - Obsolete Product(s)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Transistor Polarity npn npn
Collector Emitter Voltage Vbrceo 80 V 80 V
Transition Frequency Ft 50 MHz 50 MHz
Power Dissipation Pd 12.5 W 12.5 W
Dc Collector Current 3 A 3 A
Dc Current Gain Hfe 50hfe 50hfe
Transistor Case Style sot - 32 sot - 32
No Of Pins 3pins 3pins
Operating Temperature Max 150 C 150 C
Svhc no svhc (17 - dec - 2015) no svhc (17 - dec - 2015)
Collector Emitter Saturation Voltage Vceon 300 mV 300 mV
Current Ic Continuous A Max 3 A 3 A
Gain Bandwidth Ft Typ 50mhz 50mhz
Hfe Min 12 12
Termination Type through hole through hole