ST13003D-K STMicroelectronics

ST13003D-K High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Integrated antiparallel collector-emitter diode 1 2 3 Applications SOT-32 Electronic ballast for fluorescent lighting Description Figure 1. Internal schematic diagram The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Table 1. Device summary Order code Marking Package Packaging ST13003D-K 13003D SOT-32 Bag September 2009 Doc ID 14182 Rev 2 1/8 www.st.com 8 Obsolete Product(s) - Obsolete Product(s)Electrical ratings ST13003D-K 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Emitter-base voltage (I = 0, I = 0.75 A, t < 10 s) V V EBO C B P (BR)EBO I Collector current 1.5 A C I Collector peak current (t < 5 ms) 3 A CM P I Base current 0.75 A B I Base peak current (t < 5 ms) 1.5 A BM P P Total dissipation at T = 25 C 40 W TOT c T Storage temperature -55 to 150 C STG T Max. operating junction temperature 150 C J 2/8 Doc ID 14182 Rev 2 Obsolete Product(s) - Obsolete Product(s)