Product Information

ST13003D-K

Name: ST13003D-K
Brand: STMicroelectronics
SKU: ST13003DK_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

ST13003D-K electronic component of STMicroelectronics

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Bipolar (BJT) Transistor NPN 400 V 1.5 A 40 W Through Hole SOT-32-3

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.8966 ea
Line Total: USD 0.9

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Wed. 15 May to Tue. 21 May MOQ : 1 Multiples : 1 ST13003D-K STMicroelectronics	1 : USD 0.1996

0 - WHS 2 Ships to you between Wed. 15 May to Tue. 21 May MOQ : 1 Multiples : 1 ST13003D-K STMicroelectronics	1 : USD 0.9375 10 : USD 0.774 100 : USD 0.5361 500 : USD 0.4479 1000 : USD 0.3812

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Additional Infomation About Product

ST13003D-K High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Integrated antiparallel collector-emitter diode 1 2 3 Applications SOT-32 Electronic ballast for fluorescent lighting Description Figure 1. Internal schematic diagram The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Table 1. Device summary Order code Marking Package Packaging ST13003D-K 13003D SOT-32 Bag September 2009 Doc ID 14182 Rev 2 1/8 www.st.com 8 Obsolete Product(s) - Obsolete Product(s)Electrical ratings ST13003D-K 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Emitter-base voltage (I = 0, I = 0.75 A, t < 10 s) V V EBO C B P (BR)EBO I Collector current 1.5 A C I Collector peak current (t < 5 ms) 3 A CM P I Base current 0.75 A B I Base peak current (t < 5 ms) 1.5 A BM P P Total dissipation at T = 25 C 40 W TOT c T Storage temperature -55 to 150 C STG T Max. operating junction temperature 150 C J 2/8 Doc ID 14182 Rev 2 Obsolete Product(s) - Obsolete Product(s)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
RoHS - XON Y Y
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 32 SOT - 32
Transistor Polarity Npn Npn
Configuration Single Single
Maximum DC Collector Current 1.5 A 1.5 A
Collector- Emitter Voltage VCEO Max 400 V 400 V
Emitter- Base Voltage VEBO 9 V 9 V
Pd - Power Dissipation 40000 mW 40000 mW
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Series St13003 St13003
Packaging Bulk Bulk
Dc Current Gain Hfe Max 8 8
Brand Stmicroelectronics Stmicroelectronics
Dc Collector/Base Gain Hfe Min 8 At 0.5 A At 2 V, 5 At 1 A At 2 V 8 At 0.5 A At 2 V, 5 At 1 A At 2 V
Factory Pack Quantity : 500 500