Product Information

ST13007

ST13007 electronic component of STMicroelectronics

Datasheet
Bipolar (BJT) Transistor NPN 400 V 8 A 80 W Through Hole TO-220
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.495 ea
Line Total: USD 1.5

175 - Global Stock
Ships to you between
Thu. 16 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
88 - WHS 1


Ships to you between
Thu. 23 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

ST13007
STMicroelectronics

1 : USD 1.7727
10 : USD 1.5611
30 : USD 1.4443
100 : USD 1.3114
500 : USD 1.2529
1000 : USD 1.2267

Read More Specifications

     
Manufacturer
Product Category
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Category
Brand Category
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Additional Infomation About Product

ST13007 High voltage fast-switching NPN power transistor Features DC current gain classification TAB High voltage capability Low spread of dynamic parameters Very high switching speed Applications 3 2 1 Electronic ballast for fluorescent lighting TO-220 Switch mode power supplies Description Figure 1. Internal schematic diagram The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Table 1. Device summary (1) Order code Marking Package Packaging ST13007A ST13007 TO-220 Tube ST13007B 1. The product is classified in DC current gain group A and group B, see Table 5: hFE classification. STMicroelectronics reserves the right to ship from any group according to production availability. December 2009 Doc ID 5263 Rev 4 1/11 www.st.com 11Electrical ratings ST13007 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Emitter-base voltage (I = 0) 9 V EBO C I Collector current 8 A C I Collector peak current (t < 5 ms) 16 A CM P I Base current 4 A B I Base peak current (t < 5 ms) 8 A BM P P Total dissipation at T = 25 C 80 W TOT c T Storage temperature - 65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 1.56 C/W thJC 2/11 Doc ID 5263 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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