ST13007 STMicroelectronics

ST13007 High voltage fast-switching NPN power transistor Features DC current gain classification TAB High voltage capability Low spread of dynamic parameters Very high switching speed Applications 3 2 1 Electronic ballast for fluorescent lighting TO-220 Switch mode power supplies Description Figure 1. Internal schematic diagram The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Table 1. Device summary (1) Order code Marking Package Packaging ST13007A ST13007 TO-220 Tube ST13007B 1. The product is classified in DC current gain group A and group B, see Table 5: hFE classification. STMicroelectronics reserves the right to ship from any group according to production availability. December 2009 Doc ID 5263 Rev 4 1/11 www.st.com 11Electrical ratings ST13007 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Emitter-base voltage (I = 0) 9 V EBO C I Collector current 8 A C I Collector peak current (t < 5 ms) 16 A CM P I Base current 4 A B I Base peak current (t < 5 ms) 8 A BM P P Total dissipation at T = 25 C 80 W TOT c T Storage temperature - 65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 1.56 C/W thJC 2/11 Doc ID 5263 Rev 4