ST13007DFP STMicroelectronics

ST13007DFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR 3 2 RELIABLE OPERATION 1 VERY HIGH SWITCHING SPEED o FULLY CHARACTERIZED AT 125 C TO-220FP LARGE RBSOA FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING APPLICATIONS UP TO 120W ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS INTERNAL SCHEMATIC DIAGRAM SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = -1.5V) 700 V CEV BE V Collector-Emitter Voltage (I = 0) 400 V CEO B V Emitter-Base Voltage (I = 0) 9 V EBO C I Collector Current 8 A C I Collector Peak Current 16 A CM IB Base Current 4 A I Base Peak Current 8 A BM o Ptot Total Dissipation at T 25 C 36 W c V Insulation Withstand Voltage (RMS) from All 1500 V isol Three Leads to External Heatsink o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/7 May 2003 ST13007DFP THERMAL DATA o R Thermal Resistance Junction-case Max 3.47 C/W thj-case o R Thermal Resistance Junction-ambient Max 62.5 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 700 V 10 A CES CE o Current (V = 0) V = 700 V T = 100 C 0.5 mA BE CE c I Collector Cut-off V = 400 V 100 A CEO CE Current (I = 0) B I Emitter Cut-off Current V = 9 V 100 A EBO EB (I = 0) C V * Collector-Emitter I = 10 mA 400 V CEO(sus) C Sustaining Voltage (I = 0) B V * Collector-Emitter I = 2 A I = 0.4 A 0.8 V CE(sat) C B Saturation Voltage I = 5 A I = 1 A 1.5 V C B I = 8 A I = 2 A 2 V C B o I = 5 A I = 1 A T = 100 C 3 V C B c V * Base-Emitter I = 2 A I = 0.4 A 1.2 V BE(sat) C B Saturation Voltage I = 5 A I = 1 A 1.6 V C B o I = 5 A I = 1 A T = 100 C 1.5 V C B c h * DC Current Gain I = 2 A V = 5 V 18 40 FE C CE I = 5 A V = 5 V 8 25 C CE V Diode Forward I = 3 A 2.5 V f C Voltage INDUCTIVE LOAD I = 5 A V = 250 V R = 0 C CL BB t Storage Time I = 1 A V = -5 V 1.7 2.3 s s B1 BE(off) t Fall Time 90 150 ns f L = 200 H (see figure 1) INDUCTIVE LOAD I = 5 A V = 250 V R = 0 C CL BB ts Storage Time 2.2 s = 1 A V = -5 V B1 BE(off) o t Fall Time 150 ns f L = 200 H T = 125 C C (see figure 1) * Pulsed: Pulse duration = 300 s, duty cycle 2 %. 2/7