ST13007DFP STMicroelectronics

ST13007DFP electronic component of STMicroelectronics
ST13007DFP STMicroelectronics
ST13007DFP Bipolar Transistors - BJT
ST13007DFP  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ST13007DFP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ST13007DFP Bipolar Transistors - BJT are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. ST13007DFP
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 400 V 8 A 36 W Through Hole TO-220FP
Datasheet: ST13007DFP Datasheet (PDF)
Price (USD)
1: USD 1.8125 ea
Line Total: USD 1.81 
Availability : 4
  
Ship by Wed. 13 Aug to Fri. 15 Aug
QtyUnit Price
1$ 1.8125
10$ 0.888
100$ 0.7414
1000$ 0.693
2000$ 0.6644
5000$ 0.6578
25000$ 0.6567

Availability 4
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.8125
10$ 0.888
100$ 0.7414
1000$ 0.693
2000$ 0.6644
5000$ 0.6578
25000$ 0.6567


Availability 577
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 595
Multiples : 595
QtyUnit Price
595$ 0.7936

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Height
Length
Width
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ST13007DFP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ST13007DFP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ST13007DFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR 3 2 RELIABLE OPERATION 1 VERY HIGH SWITCHING SPEED o FULLY CHARACTERIZED AT 125 C TO-220FP LARGE RBSOA FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING APPLICATIONS UP TO 120W ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS INTERNAL SCHEMATIC DIAGRAM SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = -1.5V) 700 V CEV BE V Collector-Emitter Voltage (I = 0) 400 V CEO B V Emitter-Base Voltage (I = 0) 9 V EBO C I Collector Current 8 A C I Collector Peak Current 16 A CM IB Base Current 4 A I Base Peak Current 8 A BM o Ptot Total Dissipation at T 25 C 36 W c V Insulation Withstand Voltage (RMS) from All 1500 V isol Three Leads to External Heatsink o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/7 May 2003 ST13007DFP THERMAL DATA o R Thermal Resistance Junction-case Max 3.47 C/W thj-case o R Thermal Resistance Junction-ambient Max 62.5 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 700 V 10 A CES CE o Current (V = 0) V = 700 V T = 100 C 0.5 mA BE CE c I Collector Cut-off V = 400 V 100 A CEO CE Current (I = 0) B I Emitter Cut-off Current V = 9 V 100 A EBO EB (I = 0) C V * Collector-Emitter I = 10 mA 400 V CEO(sus) C Sustaining Voltage (I = 0) B V * Collector-Emitter I = 2 A I = 0.4 A 0.8 V CE(sat) C B Saturation Voltage I = 5 A I = 1 A 1.5 V C B I = 8 A I = 2 A 2 V C B o I = 5 A I = 1 A T = 100 C 3 V C B c V * Base-Emitter I = 2 A I = 0.4 A 1.2 V BE(sat) C B Saturation Voltage I = 5 A I = 1 A 1.6 V C B o I = 5 A I = 1 A T = 100 C 1.5 V C B c h * DC Current Gain I = 2 A V = 5 V 18 40 FE C CE I = 5 A V = 5 V 8 25 C CE V Diode Forward I = 3 A 2.5 V f C Voltage INDUCTIVE LOAD I = 5 A V = 250 V R = 0 C CL BB t Storage Time I = 1 A V = -5 V 1.7 2.3 s s B1 BE(off) t Fall Time 90 150 ns f L = 200 H (see figure 1) INDUCTIVE LOAD I = 5 A V = 250 V R = 0 C CL BB ts Storage Time 2.2 s = 1 A V = -5 V B1 BE(off) o t Fall Time 150 ns f L = 200 H T = 125 C C (see figure 1) * Pulsed: Pulse duration = 300 s, duty cycle 2 %. 2/7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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