STD1802T4 STMicroelectronics

STD1802 Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252) power 3 package in tape & reel (suffix T4) 1 TO-252 Description DPAK The device is manufactured in Planar technology (suffix T4) with Base Island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Applications Figure 1. Internal schematic diagram CCFL drivers Voltage regulators Relay drivers High efficiency, low voltage, switching applications Table 1. Device summary Order code Marking Package Packaging STD1802T4 D1802 DPAK Tape & reel July 2007 Rev 4 1/10 www.st.com 10Electrical ratings STD1802 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit V Collector-base voltage (I =0) 80 V CBO E V Collector-emitter voltage (I =0) 60 V CEO B V Emitter-base voltage (I =0) 6 V EBO C I Collector current 3 A C I Collector peak current (t < 5ms) 6 A CM P I Base current 1 A B P Total dissipation at T 25C 15 W tot c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 8.33 C/W thj-case 2/10