STE07DE220 STMicroelectronics

STE07DE220 Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07 W power module Preliminary Data Features Table 1. V I R CS(ON) C CS(ON) 0.5V 7A 0.07 High voltage / high current cascode configuration Ultra low equivalent on resistance Very fast-switch, up to 150 kHz ISOTOP Ultra low C ISS Low dynamic V CS(ON) Figure 1. Internal schematic diagrams Applications Industrial converters Welding Description The STE07DE220 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STE07DE220 is designed for use in industrial mains flyback converters and/or special applications. Table 2. Device summary Order code Marking Package Packaging STE07DE220 E07DE220 ISOTOP Tube May 2008 Rev 1 1/7 This is preliminary information on a new product in developement or undergoing evaluation. Detail are subject to change www.st.com 7 without notice.Electrical ratings STE07DE220 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-source voltage (V =V = 0) 2200 V CS(SS) BS GS V Base-source voltage (I =0, V = 0) 40 V BS(OS) C GS V Source-base voltage (I =0, V = 0) 10 V SB(OS) C GS V Gate-source voltage 20 V GS I Collector current 7 A C I Collector peak current (t < 5 ms) 14 A CM P I Base current 7 A B I Base peak current (t < 1 ms) 14 A BM P P Total dissipation at T 25 C 220 W tot c T Storage temperature -40 to 150 C stg T Max. operating junction temperature 125 C J Insulation withstand voltage (AC-RMS) from all four leads V 2500 V ISO to external heatsink Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 0.45 C/W thj-case 2/7