STK13003 STMicroelectronics

STK13003 High voltage fast-switching NPN power transistor Features STK13003 is reverse pin out versus standard SOT-82 package High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications SOT-82 Electronic ballast for fluorescent lighting (CFL) SMPS for battery charger Figure 1. Internal schematic diagram Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Table 1. Device summary Order code Marking Package Packaging STK13003 K13003 SOT-82 Tube July 2008 Rev 4 1/10 www.st.com 10Electrical ratings STK13003 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V V Emitter-base voltage (I = 0, I = 0.75A, tp < 10s) V EBO (BR)EBO C B I Collector current 1.5 A C I Collector peak current (t < 5ms) 3 A CM P I Base current 0.75 A B I Base peak current (t < 5ms) 1.5 A BM P P Total dissipation at T = 25C 40 W tot c T Storage temperature -55 to 150 C stg T Max. operating junction temperature 150 C J 2/10