Product Information

STT13005D

Name: STT13005D
Brand: STMicroelectronics
SKU: STT13005D_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STT13005D electronic component of STMicroelectronics

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Bipolar Transistors - BJT Hi Vltg Fast Switch NPN Pwr Transistr

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.5793 ea
Line Total: USD 1.58

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Wed. 22 May to Fri. 24 May MOQ : 1 Multiples : 1 STT13005D STMicroelectronics	1 : USD 1.5793 10 : USD 0.7376 100 : USD 0.3997 500 : USD 0.3148 1000 : USD 0.2434 2000 : USD 0.2206 4000 : USD 0.2154

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Additional Infomation About Product

STT13005D High voltage fast-switching NPN power transistor Features Integrated antiparallel collector-emitter diode High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications 1 2 Electronic ballast for fluorescent lighting 3 SOT-32 Flyback and forward single transistor low power converters Figure 1. Internal schematic diagram Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Table 1. Device summary Order codes Marking Package Packaging STT13005D T13005D SOT-32 Tube STT13005D-K T13005D SOT-32 Bag November 2009 Doc ID 14897 Rev 2 1/10 www.st.com 10Electrical ratings STT13005D 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Emitter-base voltage (I = 0) 9 V EBO C I Collector current 2 A C I Collector peak current (t < 5 ms) 4 A CM P I Base current 1 A B I Base peak current (t < 5 ms) 2 A BM P P Total dissipation at T = 25 C 45 W TOT c T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case Max 2.8 C/W thJC 2/10 Doc ID 14897 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
RoHS - XON Y Y
Package / Case SOT - 32 - 3 SOT - 32 - 3
Transistor Polarity Npn Npn
Configuration Single Single
Maximum DC Collector Current 2 A 2 A
Collector- Emitter Voltage VCEO Max 400 V 400 V
Emitter- Base Voltage VEBO 9 V 9 V
Pd - Power Dissipation 45 W 45 W
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Series 500V To 1000V Transistors 500V To 1000V Transistors
Height 11.05 mm 11.05 mm
Length 7.8 mm 7.8 mm
Width 2.9 mm 2.9 mm
Brand Stmicroelectronics Stmicroelectronics
Product Type Bjts - Bipolar Transistors Bjts - Bipolar Transistors
Factory Pack Quantity : 2000 2000
Subcategory Transistors Transistors
Cnhts 8541210000 8541210000
Hts Code 8541290095 8541290095
Mxhts 85412101 85412101
Taric 8541210000 8541210000