STT13005FP STMicroelectronics

STT13005FP High voltage fast-switching NPN power transistor Features High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications 1 2 Electronic ballast for fluorescent lighting 3 Flyback and forward single transistor low SOT-32FP power converters Description Figure 1. Internal schematic diagram The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Table 1. Device summary Order code Marking Package Packaging STT13005FP T13005FP SOT-32FP Bag September 2009 Doc ID 15663 Rev 2 1/10 www.st.com 10 Obsolete Product(s) - Obsolete Product(s) Electrical ratings STT13005FP 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Emitter-base voltage (I = 0) 9 V EBO C I Collector current 2 A C I Collector peak current (t < 5 ms) 4 A CM P I Base current 1 A B I Base peak current (t < 5 ms) 2 A BM P P Total dissipation at T = 25 C 30 W tot c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 4.2 C/W thJC 2/10 Doc ID 15663 Rev 2 Obsolete Product(s) - Obsolete Product(s)