STX0560 STMicroelectronics

STX0560 High voltage fast-switching NPN power transistor Features High voltage capability Very high switching speed Applications 3 Compact fluorescent lamps (CFLs) 2 SMPS for battery charger 1 TO-92 Ammopack TO-92 Description This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a Figure 1. Internal schematic diagram cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Table 1. Device summary Order codes Marking Package Packaging STX0560 X0560 TO-92 Bag STX0560-AP X0560 TO-92AP Ammopack February 2012 Doc ID 18336 Rev 3 1/13 www.st.com 13Electrical ratings STX0560 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 800 V CES BE V Collector-emitter voltage (I = 0) 600 V CEO B V Emitter-base voltage (I = 0) 7 V EBO C I Collector current 1 A C I Collector peak current (t < 5 ms) 2 A CM P I Base current 0.5 A B I Base peak current (t < 5 ms) 1 A BM P P Total dissipation at T = 25 C 1.5 W TOT a T Storage temperature -65 to 150 stg C T Max. operating junction temperature 150 J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-ambient max 83 C/W thJa 2/13 Doc ID 18336 Rev 3