Product Information

STX13004G

STX13004G electronic component of STMicroelectronics

Datasheet
Bipolar Transistors - BJT IGBT & Power Bipolar
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Warehouse 1

MOQ : 5000
Multiples : 5000

Stock Image

STX13004G
STMicroelectronics

5000 : USD 0.217
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Additional Infomation About Product

STX13004 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Application SMPS for battery charger TO-92 TO-92AP Description The device is manufactured using high voltage multi epitaxial planar technology for high switching Figure 1. Internal schematic diagram speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Table 1. Device summary Order codes Marking Package Packaging STX13004 X13004 TO-92 Bulk (1) STX13004G X13004G TO-92 Bulk STX13004-AP X13004 TO-92AP Ammopack (1) STX13004G-AP X13004G TO-92AP Ammopack 1. The letter in the order code identifies the product as ECOPACK2 grade. Please see Section 3 for details. July 2010 Doc ID 15543 Rev 3 1/11 www.st.com 11 Obsolete Product(s) - Obsolete Product(s)Electrical ratings STX13004 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Collector-base voltage (I = 0, I = 1 A, t < 10 ms) V V EBO C B P (BR)EBO I Collector current 2 A C I Collector peak current (t < 5 ms) 4 A CM P I Base current 1 A B I Base peak current (t < 5 ms) 2 A BM P P Total dissipation at T = 25 C 2.5 W TOT c T Storage temperature -65 to 150 STG C T Max. operating junction temperature 150 J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 50 C/W thJC R Thermal resistance junction-ambient max 150 C/W thJA 2/11 Doc ID 15543 Rev 3 Obsolete Product(s) - Obsolete Product(s)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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