X-On Electronics has gained recognition as a prominent supplier of BC817-16 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC817-16 Bipolar Transistors - BJT are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC817-16 Taiwan Semiconductor

BC817-16 electronic component of Taiwan Semiconductor
BC817-16 Taiwan Semiconductor
BC817-16 Bipolar Transistors - BJT
BC817-16  Semiconductors

Images are for reference only
See Product Specifications
Part No. BC817-16
Manufacturer: Taiwan Semiconductor
Category: Bipolar Transistors - BJT
Description: Taiwan Semiconductor Bipolar Transistors - BJT Transistor 300mW
Datasheet: BC817-16 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 0.0517 ea
Line Total: USD 2.58 
Availability - 0
Ship by Mon. 30 Jun
MOQ: 50  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 02 Jul to Fri. 04 Jul
MOQ : 1
Multiples : 1
1 : USD 0.19
10 : USD 0.1288
100 : USD 0.0792
1000 : USD 0.0345
3000 : USD 0.0286
9000 : USD 0.0264
24000 : USD 0.0253
45000 : USD 0.0242
99000 : USD 0.0209

0
Ship by Mon. 30 Jun
MOQ : 50
Multiples : 1
50 : USD 0.0517
100 : USD 0.0258
500 : USD 0.0232
1000 : USD 0.0194
3000 : USD 0.0175

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the BC817-16 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC817-16 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC817-16/-25/-40 Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement V 50 V CBO High surge current capability V 45 V CEO Moisture sensitivity level: level 1, per J-STD-020 V 5 V Compliant RoHS EBO Halogen-free according to IEC 61249-2-21 I 500 mA C h 250-600 FE Package SOT-23 Configuration Single die APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: SOT-23 Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A BC817- BC817- BC817- PARAMETER SYMBOL UNIT 16 25 40 Marking code on the device 6A 6B 6C Power dissipation P 300 D mW Collector-base voltage, emitter open I = 10 A, I = 0 V 50 V C E CBO Collector-emitter voltage, base open I = 10 mA, I = 0 V 45 C B CEO V Emitter-base voltage, collector open I = 1 A, I = 0 V 5 V E C EBO Collector current, dc I 500 C mA T -55 to +150 Junction temperature C J T -55 to +150 Storage temperature STG C 1 Version: K2001 BC817-16/-25/-40 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Collector cutoff current, emitter - - 0.1 V = 45 V, I = 0 I A CB E CBO open Emitter cutoff current, collector - - 0.1 V = 4 V, I = 0 I A EB C EBO open BC817-16 100 - 250 V = 1 V, CE BC817-25 160 - 400 DC current gain h FE I = 100 mA C BC817-40 250 - 600 Collector-emitter saturation - - 0.7 I = 500 mA, I = 50 mA V V C B CE(sat) voltage Base-emitter saturation - - 1.2 I = 500 mA, I = 50 mA V V C B BE(sat) voltage V = 5 V , I = 10 mA, CE C 100 - - Transition frequency f MHz T f= 100MHz ORDERING INFORMATION ORDERING CODE PACKAGE PACKING (Note1, 2) BC817-XX RF SOT-23 3K / 7 Reel BC817-XX RFG SOT-23 3K / 7 Reel Note: 1.x is device code16 ,25 and40 2. G means green compound (halogen free) 2 Version: K2001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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