X-On Electronics has gained recognition as a prominent supplier of BC817-40 RF Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC817-40 RF Bipolar Transistors - BJT are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC817-40 RF Taiwan Semiconductor

BC817-40 RF electronic component of Taiwan Semiconductor
BC817-40 RF Taiwan Semiconductor
BC817-40 RF Bipolar Transistors - BJT
BC817-40 RF  Semiconductors

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See Product Specifications
Part No. BC817-40 RF
Manufacturer: Taiwan Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SOT-23 50V 0.5A NPN Bipolar Transistor
Datasheet: BC817-40 RF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2425 ea
Line Total: USD 0.24 
Availability - 5820
Ship by Tue. 17 Jun to Thu. 19 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5820
Ship by Tue. 17 Jun to Thu. 19 Jun
MOQ : 1
Multiples : 1
1 : USD 0.2425
10 : USD 0.1688
100 : USD 0.102
1000 : USD 0.0418
3000 : USD 0.0374
9000 : USD 0.0352
24000 : USD 0.033
45000 : USD 0.0308
99000 : USD 0.0297

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Power Dissipation
Operating Temperature Classification
Operating Temp Range
Number Of Elements
Category
Dc Current Gain
Collector-Emitter Voltage
Emitter-Base Voltage
Rad Hardened
Frequency
Pin Count
Collector Current Dc
Collector-Base Voltage
Package Type
Dc Current Gain Hfe Max
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Hts Code
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC817-40 RF from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC817-40 RF and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC817-16/-25/-40 Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement V 50 V CBO High surge current capability V 45 V CEO Moisture sensitivity level: level 1, per J-STD-020 V 5 V Compliant RoHS EBO Halogen-free according to IEC 61249-2-21 I 500 mA C h 250-600 FE Package SOT-23 Configuration Single die APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: SOT-23 Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A BC817- BC817- BC817- PARAMETER SYMBOL UNIT 16 25 40 Marking code on the device 6A 6B 6C Power dissipation P 300 D mW Collector-base voltage, emitter open I = 10 A, I = 0 V 50 V C E CBO Collector-emitter voltage, base open I = 10 mA, I = 0 V 45 C B CEO V Emitter-base voltage, collector open I = 1 A, I = 0 V 5 V E C EBO Collector current, dc I 500 C mA T -55 to +150 Junction temperature C J T -55 to +150 Storage temperature STG C 1 Version: K2001 BC817-16/-25/-40 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Collector cutoff current, emitter - - 0.1 V = 45 V, I = 0 I A CB E CBO open Emitter cutoff current, collector - - 0.1 V = 4 V, I = 0 I A EB C EBO open BC817-16 100 - 250 V = 1 V, CE BC817-25 160 - 400 DC current gain h FE I = 100 mA C BC817-40 250 - 600 Collector-emitter saturation - - 0.7 I = 500 mA, I = 50 mA V V C B CE(sat) voltage Base-emitter saturation - - 1.2 I = 500 mA, I = 50 mA V V C B BE(sat) voltage V = 5 V , I = 10 mA, CE C 100 - - Transition frequency f MHz T f= 100MHz ORDERING INFORMATION ORDERING CODE PACKAGE PACKING (Note1, 2) BC817-XX RF SOT-23 3K / 7 Reel BC817-XX RFG SOT-23 3K / 7 Reel Note: 1.x is device code16 ,25 and40 2. G means green compound (halogen free) 2 Version: K2001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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