X-On Electronics has gained recognition as a prominent supplier of MMBT3906 RFG Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT3906 RFG Bipolar Transistors - BJT are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT3906 RFG Taiwan Semiconductor

MMBT3906 RFG electronic component of Taiwan Semiconductor
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Part No.MMBT3906 RFG
Manufacturer: Taiwan Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SOT-23 -40V -0.2A PN P Bipolar Transistor
Datasheet: MMBT3906 RFG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0978 ea
Line Total: USD 0.1 
Availability - 9034
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4988
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1297
10 : USD 0.0935
100 : USD 0.0632
500 : USD 0.0478
1000 : USD 0.0426
3000 : USD 0.0357
6000 : USD 0.0322
9000 : USD 0.0304
15000 : USD 0.0283
21000 : USD 0.027
30000 : USD 0.0259
75000 : USD 0.0253

9034
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.0978
10 : USD 0.0701
100 : USD 0.0356
1000 : USD 0.0287
3000 : USD 0.0242
9000 : USD 0.0218
24000 : USD 0.0207
45000 : USD 0.0184

   
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We are delighted to provide the MMBT3906 RFG from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT3906 RFG and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBT3906 Taiwan Semiconductor 350mW, PNP Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement V -40 V CBO High surge current capability V -40 V CEO Moisture sensitivity level: level 1, per J-STD-020 V -5 V RoHS Compliant EBO Halogen-free according to IEC 61249-2-21 I -200 mA C h 300 FE APPLICATIONS Package SOT-23 Switching mode power supply (SMPS) Configuration Single Die Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: SOT-23 Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 0.008g(approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL MMBT3906 UNIT Marking code on the device 2A Collector-base voltage V -40 CBO V Collector-emitter voltage V -40 V CEO Emitter-base voltage V -5 EBO V Collector current, dc I -200 mA C Power dissipation P 350 D mW T -55 to +150 Junction temperature C J T -55 to +150 Storage temperature STG C 1 Version: H2001 MMBT3906 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 357 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT V -40 - Collector-base breakdown voltage I = -10 A, I = 0 V C E (BR)CBO V -40 - Collector-emitter breakdown voltage I = -1 mA, I = 0 (BR)CEO V C B V -5 - Emitter-base breakdown voltage I = -10 A, I = 0 (BR)EBO V E C I - -100 Collector base cutoff current V = -40 V nA CBO CB I - -50 Emitter base cutoff current V = -6 V nA EBO EB V = -1 V, I = -0.1 mA 60 CE C V = -1 V, I = -1 mA 80 CE C V = -1 V, I = -10 mA h 100 300 DC current gain CE C FE V = -1 V, I = -50 mA 60 CE C V = -1 V, I = -100 mA 30 CE C - -0.25 I = -10 mA, I = -1 mA C B V Collector-emitter saturation voltage V CE(sat) - -0.4 I = -50 mA, I = -5 mA C B -0.65 -0.85 I = -10 mA, I = -1 mA C B V Base-emitter saturation voltage V BE(sat) - -0.95 I = -50 mA, I = -5 mA C B V = -20 V , I = -10 mA, CE C f 250 - Transition frequency MHz T f= 100MHz f=1MHz, V = -5 V, CB C - 4.5 Output capacitance OBO pF I = 0 E V = -3V, V = -0.5V, CC BE t - 35 ns Delay time d I = -10mA C I = -1mA t - 35 ns Rise time B1 r V = -3V, I = -10mA t - 225 ns Storage time CC C s I = I = -1mA t - 75 ns Fall time B1 B2 f ORDERING INFORMATION ORDERING CODE PACKAGE PACKING MMBT3906 RF SOT-23 3K / 7 Reel MMBT3906 RFG SOT-23 3K / 7 Reel MMBT3906 R5 SOT-23 10K / 13 Reel MMBT3906 R5G SOT-23 10K / 13 Reel Note: G means green compound (halogen free) 2 Version: H2001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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TSC (Taiwan Semiconductor)
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