MMBT3906 Taiwan Semiconductor 350mW, PNP Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement V -40 V CBO High surge current capability V -40 V CEO Moisture sensitivity level: level 1, per J-STD-020 V -5 V RoHS Compliant EBO Halogen-free according to IEC 61249-2-21 I -200 mA C h 300 FE APPLICATIONS Package SOT-23 Switching mode power supply (SMPS) Configuration Single Die Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: SOT-23 Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 0.008g(approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL MMBT3906 UNIT Marking code on the device 2A Collector-base voltage V -40 CBO V Collector-emitter voltage V -40 V CEO Emitter-base voltage V -5 EBO V Collector current, dc I -200 mA C Power dissipation P 350 D mW T -55 to +150 Junction temperature C J T -55 to +150 Storage temperature STG C 1 Version: H2001 MMBT3906 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 357 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT V -40 - Collector-base breakdown voltage I = -10 A, I = 0 V C E (BR)CBO V -40 - Collector-emitter breakdown voltage I = -1 mA, I = 0 (BR)CEO V C B V -5 - Emitter-base breakdown voltage I = -10 A, I = 0 (BR)EBO V E C I - -100 Collector base cutoff current V = -40 V nA CBO CB I - -50 Emitter base cutoff current V = -6 V nA EBO EB V = -1 V, I = -0.1 mA 60 CE C V = -1 V, I = -1 mA 80 CE C V = -1 V, I = -10 mA h 100 300 DC current gain CE C FE V = -1 V, I = -50 mA 60 CE C V = -1 V, I = -100 mA 30 CE C - -0.25 I = -10 mA, I = -1 mA C B V Collector-emitter saturation voltage V CE(sat) - -0.4 I = -50 mA, I = -5 mA C B -0.65 -0.85 I = -10 mA, I = -1 mA C B V Base-emitter saturation voltage V BE(sat) - -0.95 I = -50 mA, I = -5 mA C B V = -20 V , I = -10 mA, CE C f 250 - Transition frequency MHz T f= 100MHz f=1MHz, V = -5 V, CB C - 4.5 Output capacitance OBO pF I = 0 E V = -3V, V = -0.5V, CC BE t - 35 ns Delay time d I = -10mA C I = -1mA t - 35 ns Rise time B1 r V = -3V, I = -10mA t - 225 ns Storage time CC C s I = I = -1mA t - 75 ns Fall time B1 B2 f ORDERING INFORMATION ORDERING CODE PACKAGE PACKING MMBT3906 RF SOT-23 3K / 7 Reel MMBT3906 RFG SOT-23 3K / 7 Reel MMBT3906 R5 SOT-23 10K / 13 Reel MMBT3906 R5G SOT-23 10K / 13 Reel Note: G means green compound (halogen free) 2 Version: H2001