TSC873CW RPG Taiwan Semiconductor

TSC873CW RPG electronic component of Taiwan Semiconductor
TSC873CW RPG Taiwan Semiconductor
TSC873CW RPG Bipolar Transistors - BJT
TSC873CW RPG  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TSC873CW RPG Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. TSC873CW RPG Bipolar Transistors - BJT are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. TSC873CW RPG
Manufacturer: Taiwan Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN Silicon Planar Med Power Transistor
Datasheet: TSC873CW RPG Datasheet (PDF)
Price (USD)
1: USD 1.1513 ea
Line Total: USD 1.15 
Availability : 9700
  
Ship by Wed. 20 Aug to Fri. 22 Aug
QtyUnit Price
1$ 1.1513
10$ 0.7225
100$ 0.4268
500$ 0.3399
1000$ 0.3135
2500$ 0.2849
5000$ 0.2607
10000$ 0.2596
25000$ 0.2497

Availability 9700
Ship by Wed. 20 Aug to Fri. 22 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1513
10$ 0.7225
100$ 0.4268
500$ 0.3399
1000$ 0.3135
2500$ 0.2849
5000$ 0.2607
10000$ 0.2596
25000$ 0.2497

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Package / Case
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TSC873CW RPG from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSC873CW RPG and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TSC873CW Taiwan Semiconductor NPN Silicon Planar High Voltage Transistor FEATURES KEY PERFORMANCE PARAMETERS High BV , BV PARAMETER VALUE UNIT CEO CBO High current gain BV 400 V CEO Compliant to RoHS Directive 2011/65/EU BV 600 V CBO and in accordance to WEEE 2002/96/EC I 1 A Halogen-Free according to IEC 61249-2-21 C V I =0.5A, I =0.1A 0.5 V CE(SAT) C B APPLICATION Lighting Switch mode power supply SOT-223 Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V V 600 CBO Collector-Emitter Voltage V V CEO 400 Emitter-Base Voltage V V 9 EBO DC A 1 Collector Current I C Pulse A 2 Power Total Dissipation T =25C P 1.2 W A DTOT o Maximum Operating Junction Temperature T +150 C J o Storage Temperature Range T -55 to +150 C STG 1 Version: E1801 TSC873CW Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 1) Static I =100A BV 600 -- -- Collector-Base voltage V C CBO Collector-Emitter breakdown voltage I =1mA BV 400 -- -- V C CEO I =100A BV 9 -- -- Emitter-Base breakdown voltage V E EBO Emitter cut-off current V =8V I -- -- 100 A EB EBO V =600V I -- -- 100 Collector cut-off current A CB CBO -- -- 1 mA Collector-Emitter Cutoff Current V = 400V I CE CEO Collector-Emitter saturation voltage I =500mA, I =100mA V 1 --- -- 0.5 V C B CE(SAT) Collector-Emitter saturation voltage I =1A, I =250mA V 2 --- -- 1 V C B CE(SAT) Base-Emitter saturation voltage I =500mA, I =100mA V 1 -- -- 1 V C B BE(SAT) Base-Emitter saturation voltage I =1A, I =250mA V 2 -- -- 1.2 V C B BE(SAT) DC Current Gain V =10V, I =250mA h 1 80 -- -- CE C FE (Note 2) Resistive Load Switching Time T -- 1 -- Turn-on Time s on V =125V, I =1A, CC C Storage Time T -- 4 -- s STG I =I =200mA B1 B2 T -- 0.7 -- Fall Time s f Notes: 1. Pulse test: 380s, duty cycle 2% 2. For DESIGN AID ONLY, not subject to production testing. ORDERING INFORMATION PART NO. PACKAGE PACKING TSC873CW RPG SOT-223 2,500pcs / 13Reel 2 Version: E1801

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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TSC (Taiwan Semiconductor)
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