Product Information

TSC966CW RPG

TSC966CW RPG electronic component of Taiwan Semiconductor

Datasheet
Bipolar Transistors - BJT NPN Silicon Planar Med Power Transistor

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0464 ea
Line Total: USD 0.05

378 - Global Stock
Ships to you between
Tue. 14 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
378 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

TSC966CW RPG
Taiwan Semiconductor

1 : USD 0.0464
10 : USD 0.039
25 : USD 0.0382
100 : USD 0.0382
250 : USD 0.0382

4306 - WHS 2


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

TSC966CW RPG
Taiwan Semiconductor

1 : USD 0.3795
10 : USD 0.3185
100 : USD 0.2311
500 : USD 0.2162
1000 : USD 0.1874
2500 : USD 0.1702
10000 : USD 0.1392
25000 : USD 0.1368
50000 : USD 0.1322

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Package / Case
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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TSC966CW Taiwan Semiconductor NPN Silicon Planar High Voltage Transistor FEATURES KEY PERFORMANCE PARAMETERS High BV , BV PARAMETER VALUE UNIT CEO CBO High current gain BV 400 V CEO Compliant to RoHS Directive 2011/65/EU BV 600 V CBO and in accordance to WEEE 2002/96/EC I 300 mA Halogen-Free according to IEC 61249-2-21 C V I =50mA, I =5mA 0.5 V CE(SAT) C B APPLICATION Lighting Switch mode power supply SOT-223 Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V V CBO 600 Collector-Emitter Voltage V V CES 600 Collector-Emitter Voltage V =0V V V BE 400 CES Emitter-Base Voltage V V EBO 7 DC A 0.3 Collector Current I C Pulse A 1 Power Total Dissipation T =25C P 1 W A DTOT o Maximum Operating Junction Temperature T +150 C J o Storage Temperature Range T -55 to +150 C STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT o Junction to Ambient Thermal Resistance R 91 C/W JA o Junction to Case Thermal Resistance R 25 C/W JC 1 Version: F1801 TSC966CW Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 1) Static I =50A BV 600 -- -- Collector-Base voltage V C CBO Collector-Emitter Saturation Voltage I =100A, V =0 BV 600 -- -- V C BE CES I =1mA BV 400 -- -- Collector-Emitter breakdown voltage V C CEO Emitter-Base breakdown voltage I =50A BV 7 -- -- V E EBO V =7V I -- -- 1.5 Emitter cut-off current A EB EBO Collector cut-off current V =600V I -- -- 0.5 A CB CBO Collector-Emitter Cutoff Current V =400V I -- -- 1 A CE CEO Collector-Emitter saturation voltage I =50mA, I =5mA V --- -- 0.5 V C B CE(SAT) Base-Emitter saturation voltage I =50mA, I =5mA V -- -- 1 V C B BE(SAT) V =5V, I =1mA h 1 100 -- -- CE C FE DC Current Gain V =5V, I =20mA h 2 90 -- 300 CE C FE Transition Frequency f 50 -- -- MHz V = 10V, I =20mA T CE E 7 pF Output Capacitance Cob -- -- V =20V, f =1MHz CB Notes: 1. Pulse test: 380s, duty cycle 2% 2. For DESIGN AID ONLY, not subject to production testing. ORDERING INFORMATION PART NO. PACKAGE PACKING TSC966CW RPG SOT-223 2,500pcs / 13Reel 2 Version: F1801

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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