2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1182 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications AEC-Q101 Qualified (Note1). Excellent h linearity : h = 25 (min) FE FE (2) at V = 6 V, I = 400 mA CE C Complementary to 2SC2859. Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 35 V CBO Collector-emitter voltage V 30 V CEO Emitter-base voltage V 5 V EBO Collector current I 500 mA JEDEC TO-236MOD C Base current I 50 mA B JEITA SC-59 P (Note 2, 4) 200 C Collector power dissipation mW TOSHIBA 2-3F1A P (Note 3) 150 C Weight: 0.012 g (typ.) T (Note 2) 150 j Junction temperature C T (Note 3) 125 j T (Note 2) 55 to 150 stg Storage temperature range C T (Note 3) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number in other than LF(T. 2 Note 4: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.8 mm 3) Start of commercial production 1982-12 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 2SA1182 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V 35 V, I 0 A 0.1 A CBO CB E Emitter cut-off current I V 5 V, I 0 A 0.1 A EBO EB C hFE (1) (Note) VCE 1 V, IC 100 mA 70 400 DC current gain h (Note) V 6 V, I 400 mA 25 FE (2) CE C Collector-emitter saturation voltage V I 100 mA, I 10 mA 0.1 0.25 V CE (sat) C B Base-emitter voltage V V 1 V, I 100 mA 0.8 1.0 V BE CE C Transition frequency f V 6 V, I 20 mA 200 MHz T CE C Collector output capacitance C V 6 V, I 0 A, f 1 MHz 13 pF ob CB E Note: h classification O(0): 70 to 140, Y(Y): 120 to 240, GR(G): 200 to 400 ( ) Marking Symbol FE (1) h classification O: 25 (min), Y: 40 (min), GR: 70 (min) FE (2) Marking Z O Z: Type Name O: h Rank FE 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation