2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1588 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications AEC-Q101 Qualified (Note1) Excellent hFE linearity: hFE (2) = 25 (min) at VCE = 6 V, IC = 400 mA Complementary to 2SC4118 Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 35 V CBO Collector-emitter voltage V 30 V CEO Emitter-base voltage V 5 V EBO Collector current I 500 mA C JEDEC Base current I 50 mA B JEITA SC-70 P (Note 2, 4) 200 C Collector power dissipation mW P (Note 3) 100 C TOSHIBA 2-2E1A T (Note 2) 150 j Weight: 0.006 g (typ.) Junction temperature C T (Note 3) 125 j T (Note 2) 55 to 150 stg Storage temperature range C T (Note 3) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number in other than LF(T. 2 Note 4: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.5 mm 3) Start of commercial production 1987-01 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 2SA1588 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB 35 V, IE 0 A 0.1 A Emitter cut-off current I V 5 V, I 0 A 0.1 A EBO EB C h V 1 V, I 100 mA 70 400 FE (1) CE C DC current gain (Note) h V 6 V, I 400 mA 25 FE (2) CE C Collector-emitter saturation voltage V I 100 mA, I 10 mA 0.1 0.25 V CE (sat) C B Base-emitter voltage V V 1 V, I 100 mA 0.8 1.0 V BE CE C Transition frequency f V 6 V, I 20 mA 200 MHz T CE C Collector output capacitance C V 6 V, I 0 A, f 1 MHz 13 pF ob CB E Note: h classification O(O): 70~140, Y(Y): 120~240, GR(G): 200~400 ( ) Marking Symbol FE (1) h classification O: 25 (min), Y: 40 (min), GR: 75 (min) FE (2) Marking 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation