2SA1832 Bipolar Transistors Silicon PNP Epitaxial Type 2SA1832 1. Applications Low-Frequency Amplifiers 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: V = -50 V CEO (3) High collector current: I = -150 mA (max) C (4) High h : h = 70 to 400 FE FE (5) Excellent h linearity: h (I = -0.1 mA)/h (I = -2 mA) = 0.95 (typ.) FE FE C FE C (6) Complementary to 2SC4738 (7) Small package 3. Packaging 1: Base 2: Emitter 3: Collector SSM Start of commercial production 1990-10 2021 2021-07-06 1 Toshiba Electronic Devices & Storage Corporation Rev.2.02SA1832 4. Orderable part number Orderable part number AEC-Q101 Note 2SA1832-O 2SA1832-O,LF General Use 2SA1832-O,LXGF YES (Note 1) Unintended Use (Note 1) 2SA1832-O,LXHF YES Automotive Use 2SA1832-Y 2SA1832-Y,LF General Use 2SA1832-Y,LXGF YES (Note 1) Unintended Use (Note 1) 2SA1832-Y,LXHF YES Automotive Use 2SA1832-GR 2SA1832-GR,LF General Use 2SA1832-GR,LXGF YES (Note 1) Unintended Use (Note 1) 2SA1832-GR,LXHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Collector-base voltage V -50 V CBO Collector-emitter voltage V -50 V CEO Emitter-base voltage V -5 V EBO Collector current (DC) I -150 mA C Base current I -30 mA B Collector power dissipation (Note 2), (Note 4) P 120 mW C (Note 3) 100 Junction temperature (Note 2) T 150 j (Note 3) 125 Storage temperature (Note 2) T -55 to 150 stg (Note 3) -55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number ending in XGF(T, XHF(T. Note 4: Device mounted on an 25.4 mm 25.4 mm 1.6 mm FR4 glass epoxy board (Cu pad: 0.36 mm2 3) 6. Electrical Characteristics (Unless otherwise specified, T = 25 ) a Characteristics Symbol Note Test Condition Min Typ. Max Unit Collector cut-off current I V = -50 V, I = 0 A -0.1 A CBO CB E Emitter cut-off current I V = -5 V, I = 0 mA -0.1 A EBO EB C DC current gain h (Note 5) V = -6 V, I = -2 mA 70 400 FE CE C Collector-emitter saturation V I = -100 mA, I = -10 mA -0.1 -0.3 V CE(sat) C B voltage Transition frequency f V = -10 V, I = -1 mA 80 MHz T CE C Collector output capacitance C V = -10 V, I = 0 A, f = 1 MHz 4 7 pF ob CB E Note 5: h classification O (O): 70 to 140, Y (Y): 120 to 240, GR (G): 200 to 400 FE ( ) marking symbol 2021 2021-07-06 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0