2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm AEC-Q101 Qualified (Note1). High voltage: V = 120 V CEO Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200 to 700 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1163 Small package Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 120 V CBO Collector-emitter voltage V 120 V CEO Emitter-base voltage V 5 V EBO JEDEC TO-236MOD Collector current I 100 mA C JEITA SC-59 Base current I 20 mA B P (Note 2, 4) 200 C TOSHIBA 2-3F1A Collector power dissipation mW P (Note 3) 150 C Weight: 0.012 g (typ.) Tj (Note 2) 150 Junction temperature C T (Note 3) 125 j T (Note 2) 55 to 150 stg Storage temperature range C T (Note 3) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number in other than LF(T. 2 Note 4: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.8 mm 3) Start of commercial production 1982-10 2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 2SC2713 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V 120 V, I 0 A 0.1 A CBO CB E Emitter cut-off current I V 5 V, I 0 A 0.1 A EBO EB C h FE DC current gain V 6 V, I 2 mA 200 700 CE C (Note) Collector-emitter saturation voltage V I 10 mA, I 1 mA 0.3 V CE (sat) C B Transition frequency f V 6 V, I 1 mA 100 MHz T CE C Collector output capacitance C V 10 V, I 0 A, f 1 MHz 3.0 pF ob CB E V 6 V, I 0.1 mA CE C Noise figure NF 1.0 10 dB f 1 kHz, R 10 k G Note: hFE classification GR (G): 200~400, BL (L): 350~700, ( ) marking symbol Marking 2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation