Product Information

2SC5197-O(Q)

2SC5197-O(Q) electronic component of Toshiba

Datasheet
Trans GP BJT NPN 120V 8A 3-Pin(3+Tab) TO-3PN

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 15.6379 ea
Line Total: USD 312.76

0 - Global Stock
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 20
Multiples : 20

Stock Image

2SC5197-O(Q)
Toshiba

20 : USD 15.6379
60 : USD 13.9041
100 : USD 12.5204

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Brand
Deleted
Collector Current Dc
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Frequency
Power Dissipation
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Dc Current Gain
Operating Temperature Classification
Category
Rad Hardened
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
2SA1162-Y,LF electronic component of Toshiba 2SA1162-Y,LF

Transistors Bipolar - BJT PNP Transistor -50V S-Mini -0.15A -0.3V
Stock : 12000

1SS352,H3F electronic component of Toshiba 1SS352,H3F

Diodes - General Purpose, Power, Switching 0.1A 80V Switching High-Speed Diode
Stock : 19860

T2N7002BK,LM electronic component of Toshiba T2N7002BK,LM

N-Channel 60 V 400mA (Ta) 320mW (Ta) Surface Mount SOT-23-3
Stock : 86040

TBC857B,LM electronic component of Toshiba TBC857B,LM

Bipolar Transistors - BJT BJT PNP -0.15A -50V
Stock : 0

TMBT3906,LM electronic component of Toshiba TMBT3906,LM

Bipolar (BJT) Transistor PNP 50 V 150 mA 250MHz 320 mW Surface Mount SOT-23-3
Stock : 116

DF2S16FS,L3M electronic component of Toshiba DF2S16FS,L3M

ESD Suppressors / TVS Diodes ESD PROTECTION DIODE
Stock : 9970

CES521,L3F electronic component of Toshiba CES521,L3F

Schottky Diodes & Rectifiers SM Sig Schotky Diode 30 VR 0.2A 1 Circuit
Stock : 0

RN1301,LF electronic component of Toshiba RN1301,LF

Bipolar Transistors - Pre-Biased USM TRANSISTOR Pd 100mW F 250Mhz
Stock : 2889

TMBT3904,LM electronic component of Toshiba TMBT3904,LM

Bipolar (BJT) Transistor NPN 50 V 150 mA 300MHz 320 mW Surface Mount SOT-23-3
Stock : 29580

2SA1162-GR,LF electronic component of Toshiba 2SA1162-GR,LF

Transistors Bipolar - BJT PNP Transistor -50V S-Mini -0.15A -0.3V
Stock : 2800

Image Description
2N5401 electronic component of Central Semiconductor 2N5401

Central Semiconductor Bipolar Transistors - BJT PNP Gen Pr Amp
Stock : 1

2SD1898T100Q electronic component of ROHM 2SD1898T100Q

Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 2 W Surface Mount MPT3
Stock : 1

MJE170G electronic component of ON Semiconductor MJE170G

Bipolar (BJT) Transistor PNP 40 V 3 A 50MHz 1.5 W Through Hole TO-126
Stock : 266

FMMT551TA electronic component of Diodes Incorporated FMMT551TA

Bipolar Transistors - BJT PNP Medium Power
Stock : 15000

BC807DS,115 electronic component of Nexperia BC807DS,115

Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Stock : 378000

NSS60601MZ4T3G electronic component of ON Semiconductor NSS60601MZ4T3G

ON Semiconductor Bipolar Transistors - BJT 60V6A LOW VCE(SAT) NPN
Stock : 1

KSC2330YTA electronic component of ON Semiconductor KSC2330YTA

Bipolar (BJT) Transistor NPN 300 V 100 mA 50MHz 1 W Through Hole TO-92-3
Stock : 0

CMUT2907A TR electronic component of Central Semiconductor CMUT2907A TR

Central Semiconductor Bipolar Transistors - BJT PNP
Stock : 8901

2SC4117-BL,LF electronic component of Toshiba 2SC4117-BL,LF

Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Stock : 1

2N4401 electronic component of ON Semiconductor 2N4401

Trans GP BJT NPN 40V 0.6A 3-Pin TO-92 Bulk
Stock : 0

2SC5197 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5197 Power Amplifier Applications Unit: mm Complementary to 2SA1940 Suitable for use in 55-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 120 V CBO Collector-emitter voltage V 120 V CEO Emitter-base voltage V 5 V EBO Collector current I 8 A C Base current I 0.8 A B Collector power dissipation P 80 W C (Tc = 25C) Junction temperature T 150 C j JEDEC Storage temperature range T 55 to 150 C stg JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-16C1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 4.7 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 2SC5197 Electrical Characteristics (Tc = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 120 V, I = 0 5.0 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 5.0 A EBO EB C Collector-emitter breakdown voltage V I = 50 mA, I = 0 120 V (BR) CEO C B h FE (1) V = 5 V, I = 1 A 55 160 CE C DC current gain (Note) h V = 5 V, I = 4 A 35 75 FE (2) CE C Collector-emitter saturation voltage V I = 6 A, I = 0.6 A 0.35 2.0 V CE (sat) C B Base-emitter voltage V V = 5 V, I = 4 A 0.95 1.5 V BE CE C Transition frequency f V = 5 V, I = 1 A 30 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 120 pF ob CB E Note: h classification R: 55 to 110, O: 80 to 160 FE (1) Marking TOSHIBA C5197 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or Characteristics lead (Pb)-free finish. indicator 2 2006-11-10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted