HN1C03F-B(TE85L,F) Toshiba

HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C03F For Muting And Switching Applications Unit: mm z Including two devices in SM6 (Super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE = 2V, IC = 4mA) z Low on resistance: RON = 1 (typ.)(IB = 5mA) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 20 V CEO Emitter-base voltage V 25 V EBO Collector current I 300 mA C JEDEC Base current I 60 mA B JEITA Collector power dissipation P * 300 mW C 2-3N1A TOSHIBA Junction temperature T 150 C j Weight: 0.015g (typ.) Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating Start of commercial production 1988-11 1 2014-03-01 HN1C03F Electrical Characteristics (Ta = 25C) (Q1,Q2 Common) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current I V = 50V, I = 0 0.1 A CBO CB E Emitter cut-off current I V = 25V, I = 0 0.1 A EBO EB C DC current gain h V = 2V, I = 4mA 200 1200 FE (Note) CE C Collector-emitter V I = 30mA, I = 3mA 0.042 0.1 V CE (sat) C B saturation voltage Base-emitter voltage V V = 2V, I = 4mA 0.61 V BE CE C Transition frequency f V = 6V, I = 4mA 30 MHz T CE C Collector output C V = 10V, I = 0, f = 1MHz 4.8 7 pF ob CB E capacitance Turn-on time 160 Switching Storage Time 500 ns time Fall time 130 Note: h Classification FE A: 200 to 700, B: 350 to 1200 Marking Equivalent Circuit (Top View) 2 2014-03-01